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Thermodynamic and electro-kinetic aspects of diffusion and migration (charge transfer) of electrons and holes across an n-p-type junction under bias and a photovoltaic cell under illumination
The present article deals with the issue of thermodynamic and electro-kinetic aspects of diffusion and migration (charge transfer) of electrons (e)...
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Synthesis of Single-Phase MoO3-Nanoparticles Using Various Acids for the Fabrication of n-MoO3/p-Si Junction Diode
In this work, we present the synthesis and characterization of molybdenum oxide (MoO 3 ) nanoparticles (NPs). The MoO 3 NPs were coated on silicon (Si)...
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Investigation of a P-N-Transition Created by Pulsed Current in a Carbon Fiber
The conductance and potential barrier height of a p-n -junction created by a pulsed current in a carbon fiber were investigated over a broad...
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Numerical Simulation and Optimization of n-Al-ZnO/n-CdS/p-CIGS/p-Si/p-MoOx/Mo Tandem Solar Cell
CdS/CIGS mono junction is a potential approach to produce an ultra-high efficiency and low-cost all-thin-film solar cell. In this article, a...
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Implementation of Low Power Inverter using Si1-xGex Pocket N & P-Channel Junction-Less Double Gate TFET
In this paper tunnel field effect transistor is reintroduced as an efficient low power replacement of MOSFET. The main drawbacks of TFET devices,...
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Impact of Substrate Temperature on the Properties of Rare-Earth Cerium Oxide Thin Films and Electrical Performance of p-Si/n-CeO2 Junction Diode
In this work, we report a p-Si/n-CeO 2 junction diode fabricated by a cost-effective and large-area deposition technique of jet nebulizer spray...
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Fabrication of n-TiO2/p-Si Photo-Diodes for Self-Powered Fast Ultraviolet Photodetectors
Fabrication of n-TiO 2 /p-Si heterojunction devices for the fast solar-blind self-powered ultraviolet photodetectors has been reported. To produce...
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Chemical States, Structural, Electrical and Current Phenomenon Properties of a Au/Cobalt Phthalocyanine/Undoped-InP MPS-Type Diode with a CoPc Interlayer
This work reviews the impact of cobalt phthalocyanine (CoPc) interlayers on the electrical and current transport properties of Au/undoped-InP...
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Bulk Parameters Effect and Comparative Performance Analysis of p-Si/n-CdS/ALD-ZnO Solar Cell
The primary concern of the Si-based solar cells heterostructure devices is the dopant-free selectively contacting carriers with p-type Si wafers. The...
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Titanium oxide decorated zinc oxide nanoparticles for dye-sensitized solar cell and heterojunction diode applications
In this study, the performance of dye-sensitized photovoltaic cells and electron charge recombination properties of p-n heterojunction diodes were...
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Effect of Copper Nanoparticles on the Optical Enhancement and the Electrical Performance of Silicon Nanowires-Based Schottky Diode
Copper nanoparticles (CuNPs) were chemically deposited on silicon nanowires (SiNWs) using an electroless dip** method. SiNWs are fabricated by a...
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A Facile Fabrication, Microstructural, Optical, Photoluminescence and Electrical Properties of Ni@CeO2 Films and p-Si/n-NDC Diodes for Photodetection Application
Pure CeO 2 and Ni-doped cerium oxide (NDC) films were deposited by a facile and economic jet nebulizer spray pyrolysis (JNSP) process at 450 ºC...
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Structural and Optical Properties of Sol–Gel-Spin Coating Nanostructured Cadmium Zinc Nickel Phosphate (CZNP) Film and the Current Transport Properties of CZNP/p-Si-Based Diode
In this work, the growth of CdZnNiPO (CZNP) thin films on glass and p-Si substrates using the sol–gel spin coating method was successfully achieved....
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A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells
In this paper, we propose a new technique in silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect...
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Improvement of the Electrical Performance of Ag/MEH-PPV/SiNWs Schottky Diode by the Insertion of a Thin Layer of MEH-PPV Polymer and Study of the Annealing Effect
Poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) thin layer was deposited on silicon nanowires (SiNWs) by electroless dip**...
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Structural, Optical and Electrical Properties of Undoped, Doped LaPO4 and Cu/Sn-LaPO4/N-Si Type Schottky Barrier Diode
The Cu/Sn-LaPO 4 /n-Si MIS Schottky barrier diode (SBD) with a 10% Sn do** has been successfully fabricated, and their photodiode properties were...
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Pressure Sensors Using Si/ZnO Heterojunction Diode
In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two...
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High Photoresponsive p-Si/n-In2O3 Junction Diodes with Low Ideality Factor Prepared Using Closely Packed Octahedral Structured In2O3 Thin Films
Octahedral indium oxide thin films with different precursor concentrations of 0.05, 0.075, 0.1 and 0.125 M were coated on glass substrates at 450 °C...
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Performance improvement of an all electrochemically constructed p-type Cu2O-based heterojunctions using high-quality n-type MZO thin films
This study describes the fabrication of p -Cu 2 O/ n -MZO/FTO heterojunctions by using a simple two-step electrodeposition method. Electronic,...
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Influence of Cu Irons on Structural, Optical, and Electrical Properties of Pure WS2 Thin Films and Development of p-Si/n-Cu@WS2 Photodiode for Optoelectronic Application
Presently, the applications of optoelectronics products have assisted the fields of telecommunication in providing value-added products. In this...
