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Pressure Sensors Using Si/ZnO Heterojunction Diode

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Abstract

In nanoregime, heterojunction diodes have efficient applications in design and fabrication of sensors. Heterojunction diodes are formed by fusing two dissimilar semiconductors. Based on the combination of the materials used, these heterostructures find applications in bioelectronics and miniaturized sensors. In the literature, many different combinations are prevailing –GaN/AlGaN, Au/ZnO, NiO/ZnO. In this paper, a heterojunction diode is designed using Si/ ZnO combination and for the first time,the device is discovered to be used as pressure sensors.. The IV characteristics, energy band profile and CV curves of Si/ZnO is studied, analyzed and validated using TCAD-ATLAS software. This paper also proves that the performance of the device fits well for pressure sensing applications using COMSOL software.

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Acknowledgements

This project has been funded by Science and Engineering Research Board (SERB) under the scheme “Teachers Associateship for Research Excellence” (TARE) with reference no. TAR/2018/000989 and its gratefully acknowledged.

Funding

This project has been funded by Science and Engineering Research Board (SERB) under the scheme Teachers Associateship for Research Excellence (TARE) with Reference no. TAR/2018/000989 (file attached).

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Velammal College of Engineering and Technology, Madurai, Tamilnadu, India

    P. Suveetha Dhanaselvam

  2. Department of Electronics and Communication Engineering, National Institute of Technology, Tiruchirappalli, Tamilnadu, India

    D. Sriram Kumar

  3. School of Electronics Engineering, Vellore Institute of Technology, Vellore, Tamilnadu, India

    V. N. Ramakrishnan & K. Ramkumar

  4. Department of Electronics and Communication Engineering, Thyagarajar College of Engineering, Madurai, Tamilnadu, India

    N. B. Balamurugan

Authors
  1. P. Suveetha Dhanaselvam
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  2. D. Sriram Kumar
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  3. V. N. Ramakrishnan
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  4. K. Ramkumar
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  5. N. B. Balamurugan
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Correspondence to P. Suveetha Dhanaselvam.

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Dhanaselvam, P.S., Kumar, D.S., Ramakrishnan, V.N. et al. Pressure Sensors Using Si/ZnO Heterojunction Diode. Silicon 14, 4121–4127 (2022). https://doi.org/10.1007/s12633-021-01177-2

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  • DOI: https://doi.org/10.1007/s12633-021-01177-2

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