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Simulation of GAA-NW-TFET Biosensor with Cluster Charge Probes for Target Biomolecule Detection
This study introduces and simulates a Gate-All-Around Nanowire Tunnel Field Effect Transistor (GAA-NW-TFET) biosensor for biomolecule detection. The...
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A Low-Temperature SiO2 Interfacial Layer Preparation using Rapid Thermal Oxidation Process for GAA Nanosheet Based I/O Transistor
In this paper, a low-temperature SiO 2 interfacial layer preparation using rapid thermal oxidation (RTO) process for gate-all-around (GAA) nanosheet...
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Origin of Heating Inside 3D FINFET and GAA Structures
The self-heating in 3D transistors below 32 nm is one of the most important factors that hinder its performance at higher biasing levels. In the...
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A Novel Metal Dielectric Metal Based GAA-Junction-Less TFET Structure for Low Loss SRAM Design
This paper investigates the performance of the gate all around junction-less tunnel field effect transistor (GAA-JLTFET) device with...
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Effect of Work Function Tuning over the Device Characteristics of GAA SNSTFT
This article talks about optimization of a p-channel Gate All Around Stacked Nano Sheet Thin Film Transistor (GAA SNSTFT) using Titatium Nitride...
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Investigation of Novel Low Bandgap Source Material for Hetero-dielectric GAA-TFET with Enhanced Performance
The customary MOSFETs can be supplanted by Tunnel Field Effect Transistors (TFETs), because of its capability of accomplishing sub-threshold swing...
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A Novel Technique to Investigate the Impact of Temperature and Process Parameters on Electrostatic and Analog/RF Performance of Channel Modulated Junctionless Gate-all-around (CM-JL-GAA) MOSFET
The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the SCE’s with high graded do** of the channel region. Temperature...
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Performance Evaluation of GAA Nanosheet FET with Varied Geometrical and Process Parameters
Nanosheet Field Effect Transistor (NSFET) is a viable contender for future scaling in sub-7-nm technology. This paper provides insights into the...
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Performance Analysis of Ferroelectric GAA MOSFET with Metal Grain Work Function Variability
This work represents a unique GAA MOSFET with metal work-function variations (WFVs) and ferroelectric material as dielectric. A random distribution...
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Silicon Nanowire GAA-MOSFET: a Workhorse in Nanotechnology for Future Semiconductor Devices
In today’s world, semiconductor nanowire GAA-MOSFET devices have stimulated a lot of scientific research interest in the field of semiconductor. It...
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Numerical Study of JAM-GS-GAA FinFET: A Fin Aspect Ratio Optimization for Upgraded Analog and Intermodulation Distortion Performance
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET with constant...
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Performance Enhancement of GAA Multi-Gate Nanowire with Asymmetric Hetero-Dielectric Oxide
In this paper, a Multi-gate asymmetric hetero-dielectric oxide gate all around nanowire MOSFET device (MG-AHD–GAA-NW) is proposed for the low power...
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TCAD Temperature Analysis of Gate Stack Gate All Around (GS-GAA) FinFET for Improved RF and Wireless Performance
In this article, we investigated the impact of temperature variation on DC, analog, RF, and wireless performance of Gate Stack Gate All Around...
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A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs
This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped...
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Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET
This work presents the analog and RF performance evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and...
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Performance and Comparative Analysis of Heterojunction Structure Based GAA-NWTFET for Low Power Applications
In this paper, a gate-all-around nanowire TFET structure is developed, making it a heterojunction structure with silicon germanium (SiGe_GAA_NWTFET)...
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Circuit Analysis and Optimization of GAA Nanowire FET Towards Low Power and High Switching
The main aim of this work is to study the effect of symmetric and asymmetric spacer length variations towards source and drain on n-channel SOI JL...
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A Novel Approach to Investigate the Impact of Hetero-High-K Gate Stack on SiGe Junctionless Gate-All-Around (JL-GAA) MOSFET
It is a well-known fact that the gate stacking is used to improve the electrostatic behavior of Si 0.5 Ge 0.5 Junctionless Gate-All-Around (JL-GAA)...
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Analytical Modeling of Threshold Voltage for Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA) MOSFET
This paper presents, analytical modeling of surface potential,threshold voltage and DIBL for a Dual-Metal Double-Gate Gate-All-Around (DM-DG-GAA)...
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Center Potential Based Analysis of Si and III-V Gate all around Field Effect Transistors (GAA-FETs)
In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center...