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Silicon Nanowire GAA-MOSFET: a Workhorse in Nanotechnology for Future Semiconductor Devices

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Abstract

In today’s world, semiconductor nanowire GAA-MOSFET devices have stimulated a lot of scientific research interest in the field of semiconductor. It has been observed as one of the strong and gifted structure for future generation nano-scaled devices and integrated circuits (ICs). Basically, the term nanotechnology is the key powerhouse of semiconductor device engineering and technology to produce and operate the materials at nano-meter scale (10−9 m or 1 nm) either by top-down approach where the bulk materials are converted to a group of nano particles (atoms) or by bottom-up approach where the single groups of nano particles (atoms) are converted to the bulk materials. Nanowire GAA MOSFET is considered as work horse in semiconductor industry due to great electrostatic controllability over the channel and tight coupling. This review article investigates the different structural designs of nanowire devices using nanotechnology approaches for future device applications.

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Acknowledgements

The Authors would like to thank School of Electronics Engineering, Vellore Institute of Technology,Vellore, for their support to use Sentaurus TCAD simulation tool to carry out this simulation.

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Authors and Affiliations

  1. School of Electronics Engineering, VIT-AP University, Amaravati, AP, 522237, India

    Krutideepa Bhol & Umakanta Nanda

  2. Department of ECE, Koneru Lakshmaiah Education Foundation, Vaddeswaram, AP, 522502, India

    Biswajit Jena

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  1. Krutideepa Bhol
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  2. Biswajit Jena
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  3. Umakanta Nanda
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Contributions

KrutideepaBhol- Conceptualization, methodology, simulation and investigation,

Biswajit Jena- Writing original draft preparation,

Umakanta Nanda- reviewing and editing.

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Correspondence to Biswajit Jena.

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Bhol, K., Jena, B. & Nanda, U. Silicon Nanowire GAA-MOSFET: a Workhorse in Nanotechnology for Future Semiconductor Devices. Silicon 14, 3163–3171 (2022). https://doi.org/10.1007/s12633-021-01136-x

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