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1. Design of Concentric Cylindrical Surrounding Double-Gate (CSDG) MOSFETs – A Fabrication Perspective in Nanoscale Regime

   Semiconductor-based cylindrical transistor structures were designed in recent years and have become a prominent substitute for the conventional...

   Naveenbalaji Gowthaman, Viranjay M. Srivastava in Silicon

   Article 28 October 2022

2. Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm

   A novel extensive subthreshold model of Cylindrical Surrounding Double-Gate (CSDG) MOSFET with gate-bias voltage and source/drain drops using the...

   Naveenbalaji Gowthaman, Viranjay M. Srivastava in Silicon

   Article 25 October 2022

3. Analytical Modeling of Cylindrical Surrounding Double-Gate MOSFET Including Channel Quantum Confinement

   In ultra-scaled device design, it is vital to incorporate the quantum-mechanical effects since charge confinement governs the inversion in the...

   Shashi Kant Dargar, Abha Dargar, ... Shilpi Birla in Silicon

   Article 19 January 2022

4. Realization with Fabrication of Dual-Gate MOSFET Based Source Follower

   The research work designs a source follower (common drain amplifier) using dual-gate MOSFET. The theoretical background for the fundamental concepts...

   Dylan Pillay, Viranjay M. Srivastava in Silicon

   Article 12 May 2022

5. Analog/RF Performance of Graded Channel Gate Stack Triple Material Double Gate Strained-Si MOSFET with Fixed Charges

   The performances of analog/RF parameters of a graded channel gate stack triple material double gate (GCGS-TMDG) strained-Silicon (s-Si) MOSFET with...

   Subba Rao Suddapalli, Bheema Rao Nistala in Silicon

   Article 22 March 2021

6. Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure

   Multi-gate devices such as double gate, FinFET and Gate-All-Around (GAA) are potential candidates to achieve the performance expected by...

   Yogesh Pratap, Jay Hind Kumar Verma in Silicon

   Article 04 January 2020

7. Impact of Variation in Fin Thickness and Self-Heating on the Output Characteristics of Triangular Gate FinFETs

   The self-heating effect (SHE) poses a significant obstacle for ultra-scaled devices, including Fin Field Effect Transistors (FinFETs) designed for...

   M. Hemalatha, N. B. Balamurugan, ... D. Sriram Kumar in Silicon

   Article 04 January 2024

8. Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

   In the realm of electronics, the performance of Silicon Trigate Rectangular Nanowires (Si-TRNW) and the structural characteristics of <001>...

   Pattunnarajam Paramasivam, Naveenbalaji Gowthaman, Viranjay M. Srivastava in Silicon

   Article Open access 02 February 2024