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Analytical Modeling of Cylindrical Surrounding Double-Gate MOSFET Including Channel Quantum Confinement

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Abstract

In ultra-scaled device design, it is vital to incorporate the quantum-mechanical effects since charge confinement governs the inversion in the semiconductor at smaller dimensions. In this paper, the authors have first-ever analyzed the quantum confinement effect for Cylindrical Surrounding Double-Gate (CSDG) MOSFET structure and developed a physical-based analytical model device using the self-consistent solution of Poisson’s & Schrödinger equations at applicable boundary conditions and variational approach. The equations’ analytical solutions provide significant insights into the charge confinement effect in the CSDG MOSFET and model the quantum confinement effect concerning the total gate capacitance correction, the surface potential, and the drain current.

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Data Availability

All the data relevant to this work is available in the manuscript. Raw data and material are available on request.

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Acknowledgements

The author’s would like to thank all the author’s of the research articles used in literature study of this work and for their reports which laid the foundation of this work.

Funding

Not Applicable. There has been NO significant financial support for this work that could have influenced its outcome.

Author information

Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Krishnankovil, Virudhunagar (Dt), Tamilnadu, India

    Shashi Kant Dargar

  2. Department of Electronics Engineering, University of KwaZulu-Natal, Durban, South Africa

    Abha Dargar

  3. Faculty of Science, Department of Electronics, Dr. R.M.L. Avadh University, Faizabad, Uttar Pradesh, India

    Jitendra Kaushal Srivastava

  4. Department of Electronics Engineering, Manipal University, Jaipur, India

    Shilpi Birla

Authors
  1. Shashi Kant Dargar
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  2. Abha Dargar
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  3. Jitendra Kaushal Srivastava
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  4. Shilpi Birla
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Contributions

SKD and AD designed the studies; AD conducted the derivation for the calculations for the structure; SKD and AD performed the experimental work; JKS and SB managed the project. All authors contributed to writing and approving the final version of the paper.

Corresponding author

Correspondence to Shashi Kant Dargar.

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We wish to confirm that there are no known conflicts of interest associated with this publication.

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All authors voluntarily agree to participate in this research study. All authors give permission to the Journal to publish this research study.

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The authors declare that they have NO known competing financial interests or personal relationships that could have influenced the work reported in this paper.

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Dargar, S.K., Dargar, A., Srivastava, J.K. et al. Analytical Modeling of Cylindrical Surrounding Double-Gate MOSFET Including Channel Quantum Confinement. Silicon 14, 7951–7960 (2022). https://doi.org/10.1007/s12633-021-01558-7

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