Search
Search Results
-
Achieving a Considerable Output Power Density in SOI MESFETs Using Silicon Dioxide Engineering
For the first time, we report achieving a considerable output power density in metal-semiconductor field-effect transistors according to...
-
A New Structure for Lateral Double Diffused MOSFET to Control the Breakdown Voltage and the On-Resistance
Lateral Double Diffused Metal Oxide Field Effect Transistor (LDMOS) are widely used in power applications for the high breakdown voltage. However,...
-
Analysis of DCTLDMOS on SOI for Power Amplifier Applications
This work demonstrated a potential LDMOS structure based on trench-gate on SOI known as dual-channel trench LDMOS (DCTLDMOS). DCTLDMOS structure is...
-
UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications
Ultra-wide bandgap (E g > 3.4 eV) channel HEMTs are attractive choice for next generation power electronics. In recent years, β-Ga 2 O 3 based field...
-
Creation of Composite Material Based on Titanium Dioxide with High Photocatalytic Characteristics by Oxidative Construction Approach
AbstractA composite material with photocatalytically active properties was obtained by electrophoretic deposition (EP) of highly dispersed anatase on...
-
A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for various high voltage, high frequency and high power...
-
Realizing low-level electrical leakage conductance of PVC based dielectric composites containing amorphous carbon spheres
Carbon nanotubes (CNTs) are used to prepare polymer composites with a high dielectric constant. However, a high leakage conductance is undesirable....
-
A Superjunction Extended Triple Gate LDMOS with Charge Accumulation Effect
A novel LDMOS device featured with Super Junction (SJ) and Extended Triple Gate (ETG) is proposed, named ETG LDMOS is demonstrated by the numerical...
-
Achieving a High Figure of Merit in LDMOSFETs with Double P-window in Silicon Dioxide
In this paper, to achieve a high figure of merit (FOM), a new Lateral Double Diffused Metal Oxide Semiconductor (LDMOS) device is presented. This new...
-
Improvement of the Nonlinear and Dielectric Properties of CaCu3Ti4O12 Ceramics by Nickel Do**
CaCu 3 Ti 4 O 12 (CCTO) ceramics have been widely demonstrated due to their high dielectric constant and are considered potential materials for capacitor...
-
Experimental and Statistical Approach to Detect the Corrosion Rate and Influencing Profiles for Enhancing Corrosion Rate of High-Voltage Insulator Materials
The influence of temperature, pollutant, and pH on the local corrosion rate of insulators installed in industrial, marine, and rural installation...
-
Degradation of the compression strength of spacers made of high-density pressboard used in power transformers under the influence of thermal ageing
The structural components inside power transformers are commonly made of high-density pressboard, due to its suitable mechanical and dielectric...
-
Super Junction Lateral Double-Diffused MOSFET with Ultra-low Specific on-Resistance Completely Eliminating Substrate Assisted Depletion Effect
In this paper, a novel Super Junction (SJ) Lateral Double-diffused MOSFET (LDMOS) is proposed. The two sides of the device substrate are connected...
-
Modulating cross-linked network structure of epoxy resin blends towards concurrently high intrinsic thermal conductivity and dielectric properties
High thermal conductivity ( k ) epoxy resin (EP) composites are widely used in electronic devices and power equipment where timely heat dissipation is...
-
Synthesis of a Garnet-Type Solid Electrolyte for the All-Solid-State Battery Application
AbstractThe Ga-doped Li 7 La 3 Zr 2 O 12 (LLZO) solid state electrolyte (SSE) is synthesized via the solid-state reaction. The structural study of the SSE...
-
Electrical and Mechanical Properties of Epoxy Composites Reinforced with Kaolin-Coated Basalt Fibers
Basalt fiber (BF) is appropriately used for manufacturing insulating rods because of its excellent aging resistance, high temperature resistance,...
-
Dielectric Properties and Corona Resistance of Si–Mg–B/EP Nano-composites
In order to meet the increasing requirements of epoxy resin matrix materials for the electrical and electronics industry, this paper presents the...
-
Investigation on the Structure and Performance of Polypropylene Sheets and Bi-axially Oriented Polypropylene Films for Capacitors
Polypropylene (PP) sheets are cast with various chill roll temperatures and rates, which are studied with differential scanning calorimetry, wide...
-
Preparation of modified ammonium polyphosphate blended aqueous boron phenolic resin and its application to insulating paper
The support material for cellulose-insulating paper is usually phenolic resin, which can no longer meet the mechanical characteristics,...
-
Improvement of a Novel SOI- MESFET with an Embedded GaN Layer for High-Frequency Operations
In this paper, we propose a novel Silicon on Insulator (SOI) Metal Semiconductor Field Effect Transistor (MESFET) with an embedded GaN layer...