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1. Growth of Cr₂O₃ on n-Silicon Substrate using AACVD and its Application as a Hole Selective Layer

   With the advancement of technology, inexpensive and highly scalable deposition techniques are extremely desirable for low-cost device fabrication....

   Md Sadullah, Syed Mohd Hussain, Kunal Ghosh in Silicon

   Article 11 December 2023

2. Impact of Substrate Temperature on Structural, Electric and Optical Characteristics of CuO Thin Films Grown by JNS Pyrolysis Technique

   The jet nebulizer spray (JNS) pyrolysis method has been successfully employed to grow CuO thin films at various substrate temperatures, ranging from...

   N. Jhansi, D. Balasubramanian, ... Mohd. Shkir in Silicon

   Article 09 January 2022

3. Comparative Performance and Reliability Analysis of Do** and Junction Free Devices with High-κ/Vacuum Gate Dielectric

   A comparative evaluation of channel hot carrier (CHC) reliability and pursuance of do**less FET (DL JLFET) and junctionless FET (JLFET) are studied...

   Rakesh Kumar, Meena Panchore, ... Jawar Singh in Silicon

   Article 02 August 2021

4. Analysis of Dielectric Characteristics of Lead Oxide/p-type Silicon Structure in a Wide Frequency and Voltage Region

   Here, the dielectric features of the Pb/PbO/p-Si junction, which was experimentally formed by the SILAR method, were researched in the frequency...

   E. Erdem, O. Gullu in Silicon

   Article 20 January 2023

5. A Novel Approach to White Light Radiation from Silicon Based Tunnel Junction LEDs

   This paper examines another kind of white light radiating half and half diode, made out of a light producing GaN/InGaN LED and a layer of...

   Bibin Vincent, S U Aswathy, ... T D Subha in Silicon

   Article 03 August 2020

6. Some remarks on the Peltier heat in the thermoelectric phenomena

   In the present article, we conceptually develop some understanding of the Peltier heat resulting at the rectifying junction between a metal and an...

   Heon-Cheol Shin, Su-Il Pyun in Journal of Solid State Electrochemistry

   Article 30 August 2021
   

7. Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods

   Catalytically active C ₇ H ₆ O/p-Si/Al Schottky barrier surfaces were developed using the method of thermal grafting in a home-built reactor. The...

   R. Mallikarjun, Anum Mohammedi, ... Rajeev Joshi in Topics in Catalysis

   Article 11 February 2022
   

8. Electrical bistability and memory switching phenomenon in Cu₂FeSnS₄ thin films: role of p-n junction

   Electrical bistability of Cu ₂ FeSnS ₄ (CFTS) thin films fabricated via successive ionic layer adsorption and reaction (SILAR) method was studied here....

   Sreejith P. Madhusudanan, Kallol Mohanta, Sudip K. Batabyal in Journal of Solid State Electrochemistry

   Article 01 March 2019
   

9. Non-Destructive Evaluation of Toxic-Less Approach on Emitter Formation by Water-based Phosphoric Acid for n-Type Silicon

   Silicon solar cells are well known as a major technology used in solar photovoltaics due to their high lifetime and highly efficient performance. The...

   Ahmad Rujhan Mohd Rais, Zon Fazlila Mohd Ahir, ... Kamaruzzaman Sopian in Silicon

   Article 29 November 2022

10. Predominant Range of Serial Resistance and Recombination Velocity at Different Concentration Levels: Vertical Multijunction Cell

    We applied taxonomy of characterization techniques to the vertical multi-junction VMJ cell for several light concentrations. The results of the...

    M. Khalis, R. Masrour in Silicon

    Article 21 September 2021

11. Performance Analysis of Group IV Material Based Tunnel Field Effect Transistor: Effect of Drain Splitting and Introducing Ge-Strip at Source- Channel Junction

    The performance effect of splitting and abrupt do** in the drain region, use of a Ge strip at source-channel junction in group IV material based ( Ge

    Surender Kumar, Rajesh Mehra, ... Rikmantra Basu in Silicon

    Article 21 November 2020

12. Current-Voltage Characteristics of 4 MeV Proton-Irradiated Silicon Diodes at Room Temperature

    A change in current-voltage ( I-V) behaviour of the p -Si-based diodes as a result of 4 MeV proton-irradiation to the fluence of 10 ¹⁶ p/cm ⁻² was...

    J. O. Bodunrin, S. J. Moloi in Silicon

    Article 22 February 2022

13. Effect of TiO₂ Thin Film with Different Dopants in Bringing Au-Metal into a Contact with n-Si

    In this work, effects of TiO ₂ contribution together with two different do** as graphene oxide (GO) and rubidium fluoride (RbF) are investigated at...

    D. E. Yıldız, H. H. Gullu, H. Kanbur Cavus in Journal of Inorganic and Organometallic Polymers and Materials

    Article 21 January 2022
    

14. Optimal Design and Performance Analysis of Vertically Stacked Nanosheet Tunnel Field Effect Transistor

    Tunneling field effect transistors (TFETs) have been proposed as switches for low-power integrated circuits. A negative-capacitance vertical-tunnel...

    S. Anthoniraj, K. Saravanan, ... N. A. Vignesh in Silicon

    Article 04 April 2022
    

15. Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode

    The current work discusses the structural, electrical, and dielectric properties of Au/n-GaAs/p-Si/Al heterojunction diode which was prepared by...

    A. Ashery, A. E. H. Gaballah, Mohamed M. M. Elnasharty in Silicon

    Article 25 September 2021

16. Green Synthesis and Electrical Properties of p-CuO/n-ZnO Heterojunction Diodes

    Abstract

    Green production of nanomaterials and their materials properties studies are majorly important for the futuristic development of nanodevices....

    Sridevi Annathurai, Siva Chidambaram, ... G. K. D. Prasanna Venkatesan in Journal of Inorganic and Organometallic Polymers and Materials

    Article 29 November 2018
    

17. Synthesis, structural characterization, therotical and electrical properties of novel sulpho-coumarin based methacrylate polymer

    In this study, a new coumarin-based methacrylate monomer was synthesized and its homopolymer P(SCou) was prepared by free radical polymerization...

    Mücahit Özdemir, Fatih Biryan, ... Ahmet Orhan Görgülü in Journal of Polymer Research

    Article 30 April 2022
    

18. Fabrication and Mathematical Modelling of a ITO-Al₂O₃-Si SIS Solar Cell

    Schottkey heterojunction devices became very popular in the 7th decade of last century. The solar cell technology also adopted the schottkey hetero...

    Kaustuv Dasgupta, Sukanta Bose, ... Utpal Gangopadhyay in Silicon

    Article 05 May 2022

19. Comparative Study of Analog Parameters for Various Silicon-Based Tunnel Field-Effect Transistors

    In this ultramodern scenario, low power, less cost and reduced storage devices are in great demand. Because the majority devices operate on a remote...

    Alluru Sreevani, Sandip Swarnakar, Sabbi Vamshi Krishna in Silicon

    Article 01 February 2022

20. Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si_0.2Ge_0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance

    Tunnel FETs (TFETs) need to meet certain conditions to be useful for analog/RF circuit applications, including a steep subthreshold slope, high...

    Kaushal Kumar, Ajay Kumar, ... Subhash Chander Sharma in Silicon

    Article 11 March 2023