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Comparative Performance and Reliability Analysis of Do** and Junction Free Devices with High-κ/Vacuum Gate Dielectric

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Abstract

A comparative evaluation of channel hot carrier (CHC) reliability and pursuance of do**less FET (DL JLFET) and junctionless FET (JLFET) are studied for various dielectrics and compared with conventional dielectric (SiO2) JLFET. The use of dielectrics such as vacuum near the drain and the high-κ (HfO2) near the source in DL JLFET (VacuHDL JLFET) allows better pursuance and reliability against channel hot carrier (CHC) effects. A simulation study has shown that the pursuance of VacuHDL in terms of Ion/Ioff ratio is improved by 4.5, 19.38 and 39.58 times, respectively, in comparison with vacuum based DL, HJL and JL. Similarly, the intrinsic delay of VacuHDL is improved by 9.5%, 56.8% and 58.7%, respectively, in comparison with VacuDL, VacuHJL and VacuJL. Hence, VacuHDL is a potential candidate for digital circuit applications. Further, we have found that vacuum-based HDL and HJL are more immunes against CHC stress and shown that the drain current of vacuHDL and vacuHJL is reduced by 6.9% and 17.5%, respectively, in comparison with conventional dialectic (SiO2) based DL and JL which is 10.4% and 20.5%. Hence, the incorporation of vacuum dielectric towards drain terminal is helpful in reducing CHC induced effect in comparison with conventional dielectric.

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Authors and Affiliations

  1. NIT Patna, Patna, India

    Rakesh Kumar & Meena Panchore

  2. G H Raisoni College of Engineering, Nagpur, Maharashtra, India

    Lokesh Bramhane

  3. IIT Patna, Patna, India

    Jawar Singh

Authors
  1. Rakesh Kumar
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  2. Meena Panchore
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  3. Lokesh Bramhane
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  4. Jawar Singh
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Contributions

Rakesh Kumar have analyzed and interpreted the problem statement and suggested a solution. Along with Lokesh Bramhane and Meena, we have simulated the different results and calibrated with the literatures. After evaluation, we all have equal contribution in preparing the manuscript. Hence authors gauranteed about the proposed work.

Corresponding author

Correspondence to Lokesh Bramhane.

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There is no competing or conflict of interests in the presented preposed work.

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We authors of the above titled paper hereby declare that the work included in the above paper is original and is an outcome of the research carried out by the authors indicated in it.

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Kumar, R., Panchore, M., Bramhane, L. et al. Comparative Performance and Reliability Analysis of Do** and Junction Free Devices with High-κ/Vacuum Gate Dielectric. Silicon 14, 5035–5039 (2022). https://doi.org/10.1007/s12633-021-01291-1

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  • DOI: https://doi.org/10.1007/s12633-021-01291-1

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