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Article
Open AccessEnhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-do**
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not...
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Article
Open AccessIntegration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe
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Article
Open AccessMechanical-force-induced non-local collective ferroelastic switching in epitaxial lead-titanate thin films
Ferroelastic switching in ferroelectric/multiferroic oxides plays a crucial role in determining their dielectric, piezoelectric, and magnetoelectric properties. In thin films of these materials, however, subst...
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Article
A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields1–3. Different device concepts have been predicted4,5 and experimental...
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Article
Open AccessComplex strain evolution of polar and magnetic order in multiferroic BiFeO3 thin films
Electric-field control of magnetism requires deterministic control of the magnetic order and understanding of the magnetoelectric coupling in multiferroics like BiFeO3 and EuTiO3. Despite this critical need, ther...
