Skip to main content

10 Result(s)

within Yu. K. Undalov Remove this filter Magnetism, Magnetic Materials Remove this filter

and

  1. No Access

    Article

    Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ( \({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %)

    The formation of ncl-Si in the amorphous matrix a-SiOx:H using a time-modulated DC plasma at an elevated oxygen content of $${...

    Yu. K. Undalov, E. I. Terukov, I. N. Trapeznikova in Semiconductors (2019)

  2. No Access

    Article

    Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( \({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %)

    The effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous a-SiOx:H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescen...

    Yu. K. Undalov, E. I. Terukov, I. N. Trapeznikova in Semiconductors (2018)

  3. No Access

    Article

    On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma

    Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge plasma is investigated. The plasma is modulated by rep...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, I. N. Trapeznikova in Semiconductors (2016)

  4. No Access

    Article

    Composition and optical properties of amorphous a-SiO x :H films with silicon nanoclusters

    The phase composition and optical properties of hydrogenated amorphous films of silicon suboxide (a-SiO x :H) with silicon nanoclusters are studied. Ultrasoft X-ray emission spec...

    V. A. Terekhov, E. I. Terukov, Yu. K. Undalov, E. V. Parinova… in Semiconductors (2016)

  5. No Access

    Article

    Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)

    Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl-Si in crystalline (c-SiO2) and amorphous (a-SiOx:H) matrices are reviewed. The effect of radio-fre- quency (RF) an...

    Yu. K. Undalov, E. I. Terukov in Semiconductors (2015)

  6. No Access

    Article

    Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition

    The results of a comprehensive study of the conditions for growing a-SiO x :H 〈Er,O〉 films are presented. The effect of the composition of various erbium-containing targets (a-Si...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. M. Lebedev… in Semiconductors (2011)

  7. No Access

    Article

    Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions

    The effect of electric field on the elemental composition and photoluminescence of films of amorphous hydrogenated silicon doped with erbium and oxygen (a-SiO x :H(Er, O)) in the...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. M. Lebedev… in Semiconductors (2008)

  8. No Access

    Article

    The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiOx:(H, Er, O) films deposited by DC magnetron sputtering

    The effect of the oxygen content ( \(C_{O_2 } \) ) in the gas mixture (20% of SiH4 + 80% of Ar) + O2 and the surface ...

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. Kh. Kudoyarova in Semiconductors (2005)

  9. No Access

    Article

    A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiOx:(H, Er) films formed by DC magnetron sputtering

    The effect of oxygen on the intensity of erbium photoluminescence at λ=1.54 µm in amorphous a-SiOx:H(Er) films formed by dc magnetron sputtering was studied. The oxygen content in the gaseous phase ranged from 0....

    Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. Kh. Kudoyarova in Semiconductors (2003)

  10. No Access

    Article

    Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

    A comparative analysis of λ=1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventi...

    E. I. Terukov, O. B. Gusev, O. I. Kon’kov, Yu. K. Undalov, M. Stutzmann… in Semiconductors (2002)