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Article
Induced transition from Schottky to ohmic contact in In/n-type Si owing to (NH4)2Sx treatment
Indium metal is deposited on n-type Si (n-Si) samples with/without (NH4)2Sx treatment in order to experimentally study the mechanism for the transition from Schottky to ohmic contact. Indium metal that is deposit...
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Article
Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)
This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage char...
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Article
Incorporation of polyvinyl alcohol into ZrO2 to modulate the hysteresis-type current–voltage characteristics of Au/ZrO2/heavily doped p-type Si devices
This study determines the effect of incorporating polyvinyl alcohol (PVA) into ZrO2 (PVA:ZrO2) on the hysteresis-type current–voltage characteristics of Au/ZrO2/heavily doped p-type Si (p+-Si) devices. In order t...
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Article
Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices
This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characte...
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Article
Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors
The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction t...
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Article
Optical properties and defects of ZnO nanorods that are modified by treatment with \(\hbox {H}_2\hbox {O}_2\) and used as conductive filaments for poly(methyl methacrylate)-based resistive switching applications
The optical and structural properties of ZnO nanorods that are modified using \(\hbox {H}_2\text {O}_2\) ...
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Article
Electrochemical properties and trap states of TiO2 nanoparticles modified by do** with graphene and used as counter electrodes for dye-sensitized solar cell applications
The electrochemical properties and trap states of TiO2 nanoparticles that are modified by do** with graphene (Gr) and used as counter electrodes (CEs) for dye-sensitized solar cell (DSSC) applications are studi...
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Article
Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance
This study determines the effect of incorporating MoS2 nanoflakes into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms using the rectification current–voltage characteristics of P3HT/n-type ...
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Article
Effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties for sol–gel grown MoS2/Si nanowire/Si devices
The effects of H2O2 treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties of a MoS2/Si nanowire (SiNW)/n-Si device are studied. The MoS2 thin films are prepared us...
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Article
Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment
The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O
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Article
Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices
The effect of interface modification on the electrical properties of heterojunction diodes based on the p-type CuAlO2 and n-type Si is investigated. Compared with the CuAlO2/Si device without H2O2 treatment, the ...
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Article
Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without (NH4)2S x treatment by chemical vapor deposition
To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si (n-Si) substrate with/without (NH4)2S x treatment by chemical vapor deposition (CVD). X-ray ...
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Article
Responsivity to solar irradiation and the behavior of carrier transports for MoS2/Si and MoS2/Si nanowires/Si devices
The behavior of carrier transports and the responsivity to solar irradiation are studied for MoS2/n-type Si (n-Si) and MoS2/Si nanowires (SiNWs)/n-Si device. The MoS2 thin films were prepared by the sol–gel metho...
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Article
Resistive switching characteristics of devices having a trilayer CuAlO x structure in the dark and under visible light illumination
The multilevel resistive switching (RS) characteristics of In/CuAlO1.85/CuAlO1.92/CuAlO1.85/heavily doped n-type Si (n+-Si) devices are studied. The sensitivity of the RS characteristics to visible light illumina...
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Article
Behavior of carrier transports and their sensitivity to solar irradiation for devices that use MoS2 that is directly deposited on Si using the chemical vapor method
To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si substrate by chemical vapor deposition (CVD). No transfer processes are needed. The MoS2 thin film that is deposited on the n-t...
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Article
SiO2 substrate passivation effects on the temperature-dependent electrical properties of MoS2 prepared by the chemical vapor deposition method
This study uses the SiO2 substrate passivation techniques to tune the electrical parameters of MoS2 for analyzing the MoS2-SiO2 interaction effect on the electrical conductivity of MoS2 and the carrier transport ...
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Article
Effects of Al do** on the responsivity of solar irradiation of devices that use ZnO nanoparticles
The effect of Al do** on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in ...
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Article
Effects of surface modification of MoS2:TiO2:Pt counter electrodes by argon plasma treatment on photovoltaic performance of dye-sensitized solar cells
The MoS2:TiO2:Pt counter electrode (CE) treated using argon plasma provides possibilities to improve photovoltaic performance of dye-sensitized solar cells (DSSCs). The experimental results revealed that the argo...
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Article
Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances
The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–vo...
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Article
Interface modification of MoS2:TiO2 counter electrode/electrolyte in dye-sensitized solar cells by do** with different Co contents
The MoS2:TiO2 counter electrode (CE) doped with different Co contents provides possibilities to improve photovoltaic performance of dye-sensitized solar cells. The experimental results revealed that the MoS2:TiO2
