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  1. Article

    Open Access

    A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals

    As tellurides and selenides of Bismuth are extensively used thermoelectric materials in the low-temperature range with refrigeration application, A concerted effort is put forth to boost the ZT by co-do** th...

    Suchitra Puthran, Ganesh Shridhar Hegde, A. N. Prabhu… in Journal of Materials Science (2024)

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  2. Article

    Open Access

    Tuning of power factor in bismuth selenide through Sn/Te co do** for low temperature thermoelectric applications

    The physical parameters of solid-state produced tin and tellurium co-doped bismuth selenide polycrystalline crystals were described. Powder X-ray diffraction revealed the hexagonal structure in the samples’ ph...

    Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu, Ramakrishna Nayak… in Applied Physics A (2024)

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  3. Article

    Open Access

    Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system

    Polycrystalline samples of (Bi1-xInx)2Se2.7Te0.3 (x = 0.00, 0.02, and 0.04) were prepared by the solid-state reaction technique. X-ray diffraction pattern confirms that the polycrystalline samples have a hexagona...

    Ganesh Shridhar Hegde, A. N. Prabhu… in Journal of Materials Science: Materials in… (2020)

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  4. No Access

    Article

    Temperature-dependent transport properties of a FeTe compound

    Temperature-dependent transport properties of a FeTe parent compound have been investigated by measurements of electrical resistivity \(\rho (T)\)ρ(T), thermal conductivity \(\kappa (T)\)κ(T) and Seebeck coeffici...

    Pavitra Devi Lodhi, Netram Kaurav, K K Choudhary, Y K Kuo in Bulletin of Materials Science (2019)

  5. No Access

    Article

    Measurement and Analysis of Normal-State Transport Properties of FeSe Superconductor

    Transport properties such as thermal conductivity (κ), Seebeck coefficient (S) and electrical resistivity (ρ) of the FeSe superconductor were measured and analyzed theoretically. The samples were synthesized thro...

    Pavitra Devi Lodhi, Netram Kaurav, K. K. Choudhary… in Journal of Low Temperature Physics (2019)

  6. No Access

    Article

    Seebeck Coefficient Measurement and Its Narrow Band Model Interpretation in FeTe0.5Se0.5 Superconductor

    We have measured Seebeck coefficient (S) of FeTe0.5Se0.5 superconducting sample from 10 to 300 K. The variation of Seebeck coefficient with temperature of this system was found to be very anomalous, and the overa...

    Pavitra Devi Lodhi, Netram Kaurav… in Journal of Superconductivity and Novel Mag… (2018)

  7. No Access

    Article

    Electrical conduction and thermal properties of Bi-doped Pr0·7Sr0·3MnO3 manganite

    Electrical and thermal properties of Bi-doped Pr 0·7 Sr 0·3 MnO 3 (PSMO) compounds are reported here. It is o...

    MAMATHA D DAIVAJNA, NEERAJ KUMAR, BHASKER GAHTORI… in Bulletin of Materials Science (2014)

  8. No Access

    Article

    Magnetic and Thermal Behavior of Ru0.9Sr2YCu2.1O7.9 Magneto-Superconductor Synthesized by High-Pressure High-Temperature Technique

    The structural, physical, and thermal property details of Ru0.9Sr2YCu2.1O7.9 (Y/Ru-1212) superconducting material synthesized through high pressure (6 GPa) and a high temperature (1400 °C) (HPHT) route are report...

    Anuj Kumar, Bhaskar Gahtori, Ashok Rao… in Journal of Superconductivity and Novel Mag… (2011)

  9. No Access

    Article

    Investigation of wavelength-dependent efficiency droop in InGaN light-emitting diodes

    The physical mechanisms leading to the efficiency droop of InGaN/GaN light-emitting diodes (LEDs) are theoretically investigated. We first discuss the effect of Auger recombination loss on efficiency droop by ...

    J.-R. Chen, Y.-C. Wu, S.-C. Ling, T.-S. Ko, T.-C. Lu, H.-C. Kuo… in Applied Physics B (2010)

  10. No Access

    Article

    Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes

    The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different ...

    S.-H. Yen, M.-C. Tsai, M.-L. Tsai, Y.-J. Shen, T.-C. Hsu, Y.-K. Kuo in Applied Physics A (2009)

  11. No Access

    Article

    Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

    The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program....

    J.-R. Chen, S.-C. Ling, H.-M. Huang, P.-Y. Su, T.-S. Ko, T.-C. Lu… in Applied Physics B (2009)

  12. No Access

    Article

    Numerical study on InGaAsN/GaAs multiple-quantum-well laser with GaAsP and GaAsN barriers

    In this work, the multiple-quantum-well InGaAsN laser structures with indirect-GaAsP and direct-GaAsN barriers are investigated by using LASTIP simulation program. We vary the quantum-well number, from 1 to 5,...

    Y.-K. Kuo, S.-H. Yen, M.-W. Yao, M.-C. Tsai, M.-L. Chen, B.-T. Liou in Applied Physics B (2008)

  13. No Access

    Article

    Electrical and thermal properties of Pr2/3(Ba1−xCsx)1/3MnO3 manganites

    Electrical and thermal properties of Pr2/3(Ba1−x Cs x )1/3MnO3 (0 ≤ x ≤ 0.25) manganite perovskites are reported here. Two insulator-metal (I-M) transitio...

    N. Panwar, D. K. Pandya, A. Rao, K. K. Wu, N. Kaurav… in The European Physical Journal B (2008)

  14. No Access

    Article

    Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers

    The physical and optical properties of compressively strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers are numerically studied. The simulation results show that the maximu...

    Y.-K. Kuo, J.-R. Chen, M.-L. Chen, B.-T. Liou in Applied Physics B (2007)

  15. No Access

    Article

    A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers

    Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confi...

    S.-W. Hsieh, Y.-K. Kuo in Applied Physics A (2006)

  16. No Access

    Article

    First-principles calculation for bowing parameter of wurtzite AlxGa1-xN

    Numerical calculation based on first-principles is applied to study the structural characteristics and the band-energy properties of wurtzite AlxGa1-xN. The lattice constants obtained from the equilibrium energy ...

    B.-T. Liou, S.-H. Yen, Y.-K. Kuo in Applied Physics A (2005)

  17. No Access

    Article

    Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode

    Theoretical analysis for different active layer structures under the same waveguide confinement is conducted to minimize the electron overflow from the active layer to the p-cladding layer for the AlGaInP las...

    M.-F. Huang, M.-L. Tsai, J.-Y. Shin, Y.-L. Sun, R.-M. Yang, Y.-K. Kuo in Applied Physics A (2005)

  18. No Access

    Article

    A numerical study of dc characteristics of HEMT with p -type δ -doped barrier

    The dc characteristics of an InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) with a p-type δ-doped InGaP barrier are numerically investigated with the ISE-TCAD simulation program. The ...

    Y. Chang, Y.-K. Kuo in Applied Physics A (2005)

  19. No Access

    Article

    Vegard’s law deviation in band gap and bowing parameter of AlxIn1-xN

    Numerical simulation based on first-principle calculations is applied to study the wurtzite AlxIn1-xN. Simulation results suggest that the Vegard’s law deviation parameter is 0.063 ± 0.014 Å for the a lattice con...

    B.-T. Liou, S.-H. Yen, Y.-K. Kuo in Applied Physics A (2005)

  20. No Access

    Article

    Exact calculation of the phase properties of one dimensional finite lattice gas systems

    The small-size partially filled one-dimensional (1D) lattice gas system with 1/rδ repulsive interactions is numerically studied. Our results indicate that phase change with vacancy ordering involved exists in th...

    T. C. King, Y. K. Kuo in The European Physical Journal B - Condense… (2005)

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