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within Y. Tokuda Remove this filter Applied and Technical Physics Remove this filter Inorganic Chemistry Remove this filter

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  1. No Access

    Article

    Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy

    An optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize the defects in 3C-SiC on Si. The O-CTS measurement enables us to estimate optical threshold energy and optical cross sectio...

    Y. Nakakura, M. Kato, M. Ichimura, E. Arai, Y. Tokuda in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Activation of Implanted Phosphorus Ions into Silicon by Followed Hydrogen Ion Implantations

    The activation of phosphorus implanted into n-type silicon (100) substrate by followed hydrogen ion(H+) implantation was studied by means of spreading resistance technique(SR), secondary ion mass spectroscopy(SIM...

    Y. Hasebe, H. Ohshima, T. Hattori, A. Usami, Y. Tokuda in MRS Online Proceedings Library (1995)

  3. No Access

    Article

    DLTS study of 3C-SiC grown on Si using hexamethyldisilane

    n-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (hexamethyldisilane) and characterized by DLTS (deep level transient spectroscopy) measurements. In order to investigate relati...

    M. Kato, M. Ichimura, E. Arai, Y. Masuda, Y. Chen… in MRS Online Proceedings Library (1994)

  4. No Access

    Article

    Dominant Midgap Levels in the Compensation Mechanism in GaAs

    Properties of midgap levels in n-type GaAs crystals were studied by using trap density spectroscopy (TDS), capacitance-voltage and near infrared (NIR) absorption measurements. The TDS analysis for various n-ty...

    H. Shiraki, Y. Tokuda, E. Tohyama, K. Sassa, N. Toyama in MRS Online Proceedings Library (1993)

  5. No Access

    Article

    Effects of Rapid Thermal Processing on MBE GaAs on Si

    Variations of electron traps in molecular-beam-epitaxial (MBE) GaAs 1ayers grown on Si substrates by rapid thermal processing (RTP) have been investigated with deep level transient spectroscopy (DLTS). RTP was...

    A. Ito, A. Kitagawa, Y. Tokuda, A. Usami, H. Kano… in MRS Online Proceedings Library (1989)

  6. No Access

    Article

    Variations of Electron Traps in MBE AlxGa1−xAs by Rapid Thermal Processing

    Using deep level transient spectroscopy we have studied the variations of electron traps in molecular beam epitaxial (MBE) AlxGa1−xAs by rapid thermal processing (RTP) using halogen lamps. RTP was performed at 70...

    H. Ueda, A. Kitagawa, Y. Tokuda, A. Usami, T. Wada… in MRS Online Proceedings Library (1988)

  7. No Access

    Article

    Diffusion of Te or Zn into GaAs from Doped SiO2 Films by Rapid Thermal Processing

    The n+ layers on semi-insulating liquid encapsulated Czochralski GaAs and p+ layers on Si-doped n-type GaAs were formed by rapid thermal diffusion (RTD) from Te- and Zn-doped oxide films, respectively. The Zn dif...

    A. Kitagawa, A. Usami, Y. Tokuda, T. Wada, H. Kan… in MRS Online Proceedings Library (1988)

  8. No Access

    Article

    Diffusion of Zn into Gaas 0.6 P0.4:Te From Zn-Doped Oxide Films By Rapid Thermal Processing

    Rapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C fo...

    A. Usami, Y. Tokuda, H. Shiraki, H. Ueda, T. Wada, H. Kan… in MRS Online Proceedings Library (1987)