SpringerLink
Log in

DLTS study of 3C-SiC grown on Si using hexamethyldisilane

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

n-type 3C-SiC was heteroepitaxially grown on n-type Si(100) substrates using HMDS (hexamethyldisilane) and characterized by DLTS (deep level transient spectroscopy) measurements. In order to investigate relationship of defect density with epilayer thickness, epilayers with various thicknesses were grown. Relatively thin (<1.0μm thick) epilayers were found to contain defects with energy levels distributed in a wide energy range, while relatively thick (>2.2μm thick) epilayers contain a defect with an activation energy of 0.25eV. This defect level is slightly shallower than that in 3C-SiC grown by SiH4 and C3H8 (≈0.3eV).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Y. Masuda, Y. Chen, H. Matsuura, H. Harima and S. Nishino, Extended Abstracts of International Conference on Silicon Carbide and Related Materials, North Carolina, (1999) abs. No.119.

    Google Scholar 

  2. P. Zhou, M. G. Spencer, G. L. Harris and K. Fekade, Appl. Phys. Lett., 50, 1384 (1987).

    Article  CAS  Google Scholar 

  3. K. Zekentes, M. Kayiambaki and G. Constantindis, Appl. Phys. Lett., 66, 3015 (1995).

    Article  CAS  Google Scholar 

  4. V. Nagesh, J. W. Farmer, R. F. Davis and H. S. Kong, Appl. Phys. Lett., 50, 1138 (1987).

    Article  CAS  Google Scholar 

  5. N. Yamada, M. Kato, M. Ichimura, E. Arai and Y. Tokuda, Jpn. J. Appl. Phys. Lett., 38, L1094 (1999).

    Article  CAS  Google Scholar 

  6. Y. Tokuda, N. Shimizu and A. Usami, Jpn. J. Appl. Phys., 18, 309 (1979)

    Article  CAS  Google Scholar 

  7. K. Shibahara, S. Nishino and H. Matsunami, J. Crystal Growth, 78, 538 (1986).

    Article  CAS  Google Scholar 

  8. W. J. Choyke, Z. C. Feng and J. A. Powell, J. Appl. Phys., 64, 3163 (1988).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555, Japan

    M. Kato, M. Ichimura & E. Arai

  2. Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan

    Y. Masuda, Y. Chen & S. Nishino

  3. Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota, 470-0392, Japan

    Y. Tokuda

Authors
  1. M. Kato
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Ichimura
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. Arai
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Y. Masuda
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Y. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. Nishino
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Y. Tokuda
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kato, M., Ichimura, M., Arai, E. et al. DLTS study of 3C-SiC grown on Si using hexamethyldisilane. MRS Online Proceedings Library 622, 431 (2000). https://doi.org/10.1557/PROC-622-T4.3.1

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-622-T4.3.1

Search

Navigation