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  1. No Access

    Article

    Effects of anodization parameters on the corrosion resistance of 6061 Al alloy using the Taguchi method

    Anodizing 6061 aluminum alloy (AA6061) in a H2SO4 electrolyte solution is a crucial process in the formation of anodic aluminum oxide (AAO) film for enhancing the material’s corrosion resistance. In this work, th...

    I. C. Chung, C. K. Chung, Y. K. Su in Microsystem Technologies (2018)

  2. No Access

    Article

    Photoluminescence of Nano-scaled YAG: Ce Phosphor Powders

    Four series of YAG:Ce phosphor powders were synthesized by solid state, co-precipitation, and sol-gel (with two different growth inhibitors, HMDS and PAA respectively) methods, which results in the average par...

    In-Gann Chen, Yulin Chen, Chii-Shyang Hwang, F. S. Juang… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer

    Nitride-based ultraviolet (UV) photosensors with a low-temperature (LT) AlGaN interlayer were fabricated and characterized. Material analysis results showed that dark pits corresponding to threading dislocatio...

    K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su… in Journal of Electronic Materials (2010)

  4. No Access

    Article

    Characterization of Mg-Doped AlInN Annealed in Nitrogen and Oxygen Ambients

    Mg-doped AlInN grown by metalorganic chemical vapor deposition (MOCVD) was demonstrated using the postgrowth thermal treatment in nitrogen and oxygen ambients. High-resolution x-ray diffraction (HRXRD) measure...

    A.T. Cheng, Y.K. Su, W.C. Lai, Y.Z. Chen, S.Y. Kuo in Journal of Electronic Materials (2008)

  5. No Access

    Chapter and Conference Paper

    Intracranial pressure fluctuation during hemodialysis in renal failure patients with intracranial hemorrhage

    Coagulopathy in renal failure patients often makes them vulnerable to intracranial hemorrhage. Emergency decompression to remove the hematoma and to stop bleeding is always indicated. After the surgery, hemodi...

    C. M. Lin, J. W. Lin, J. T. Tsai, C. P. Ko, K. S. Hung… in Reconstructive Neurosurgery (2008)

  6. No Access

    Chapter and Conference Paper

    Effect of hyperbaric oxygen on patients with traumatic brain injury

    Hyperbaric oxygen therapy (HBOT) is the medical therapeutic use of oxygen at a higher atmospheric pressure. The United States Food and Drug Administration have approved several clinical applications for HBOT, ...

    J. W. Lin, J. T. Tsai, L. M. Lee, C. M. Lin, C. C. Hung… in Reconstructive Neurosurgery (2008)

  7. No Access

    Article

    Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn

    This paper presents research on the calculating analysis and experimental observations of shell buckling in individual gallium nitride hollow nanocolumns using nanoindentation. By using the experiment results ...

    S.-C. Hung, Y.-K. Su, T.-H. Fang, S.-J. Chang in Applied Physics A (2006)

  8. No Access

    Article

    The dependence of Co nanoparticle sizes on the ratio of surfactants and the influence of different crystal sizes on magnetic properties

    Monodisperse cobalt nanoparticles were synthesized by high-temperature reduction of solution-phase cobalt chloride in the presence of a pair of surfactants, oleic acid and triphenylphosphine. Highly ordered tw...

    Y.K. Su, C.M. Shen, T.Z. Yang, H.T. Yang, H.J. Gao, H.L. Li in Applied Physics A (2005)

  9. No Access

    Article

    Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching

    GaN hollow nanocolumns were formed by inductively coupled plasma etching. It was found that the tops of the GaN nanocolumns were hexagonal with the c axis perpendicular to the substrate surface. It was also fo...

    S.C. Hung, Y.K. Su, S.J. Chang, S.C. Chen, L.W. Ji, T.H. Fang, L.W. Tu… in Applied Physics A (2005)

  10. No Access

    Article

    Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer

    AlGaN/GaN-based ultraviolet (UV) Schottky barrier photodetectors (PDs) with and without the LT GaN cap layer were both fabricated. It was found that we could achieve a lower leakage current from sample A. With...

    G. C. Chi, J. K. Sheu, M. L. Lee, C. J. Kao, Y. K. Su… in MRS Online Proceedings Library (2003)

  11. No Access

    Article

    InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

    Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO2/TiO2 distributed-Bragg reflector (DBR) structure could refl...

    Y. P. Hsu, S. J. Chang, Y. K. Su, C. S. Chang… in Journal of Electronic Materials (2003)

  12. No Access

    Article

    Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

    The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.1Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was...

    C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu… in Journal of Electronic Materials (2003)

  13. No Access

    Article

    AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

    High-quality SiO2 was successfully deposited onto GaN by photo-chemicalvapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect ...

    C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su… in Journal of Electronic Materials (2003)

  14. No Access

    Article

    Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

    The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photo...

    J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh… in Journal of Electronic Materials (2003)

  15. No Access

    Article

    InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

    Nitride-based light-emitting diodes (LEDs) with Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact ...

    L. W. Wu, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen… in Journal of Electronic Materials (2003)

  16. No Access

    Article

    InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ram**

    High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ram** method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photolu...

    T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo… in Journal of Electronic Materials (2003)

  17. No Access

    Article

    AFM study of gold nanowire array electrodeposited within anodic aluminum oxide template

    Uniform gold nanowires were synthesized by electrodepositing the gold under a very low ac frequency in the pores of an anodic aluminum oxide (AAO) template. The surface of the Au/AAO composite is very even and...

    Z. Wang, Y.-K. Su, H.-L. Li in Applied Physics A (2002)

  18. No Access

    Article

    Study of GaInP/GaAs/GaInP Double Heterostructures Grown by MOCVD with Photoreflectance and Photoluminescence

    The GaInP-GaAs single quantum well structures grown by metal-organic chemical vapor deposition (MOCVD) were investigated by photoreflectance (PR) and photoluminescence (PL) spectroscopies. The built-in electri...

    H. Kuan, S. C. Shei, W. J. Tzou, Y. K. Su in MRS Online Proceedings Library (1994)

  19. No Access

    Article

    Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

    We report the first study of impact excitation of Er ions in GaAs. The MOCVD-grown, p+-n structured EL devices were fabricated by growing, at different temperatures, GaAs:Er layers on top of the n+ GaAs substrate...

    S. J. Chang, K. Takahei, J. Nakata, Y. K. Su in MRS Online Proceedings Library (1993)

  20. No Access

    Chapter

    Researches of SiO2 on InP and GaAs Mos Structures

    High quality SiO2 layers have been grown on InP and GaAs substrates by direct photo-enhanced chemical vapor deposition (photo-CVD) using monosilane (SiH4) and oxygen (O2) as gas sources under the irradiation of d...

    Y. K. Su, C. J. Hwang, J. D. Lin in The Physics and Chemistry of SiO2 and the … (1993)

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