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    Article

    Microstructure and Texture of Ultra-High Purity Copper under Changed Rolling Strain Paths and Subsequent Recrystallization Annealing

    For advanced integrated circuits semiconductor chip, the uniformity of microstructure and texture is increasingly required for copper target material of ultra-high purity (≥99.9999%). To this end, well-customi...

    Y. P. Ding, M. Zhang, S. Y. Zhou, H. Y. Fan in Physics of Metals and Metallography (2023)

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    Article

    Effect of roller burnishing process parameters on the surface roughness and microhardness for TA2 alloy

    Rolling burnishing is an effective method to improve the surface integrity of the machined part. It not only increases the hardness of the machined surface but also reduces the surface roughness. In this paper...

    X. L. Yuan, Y. W. Sun, L. S. Gao in The International Journal of Advanced Manu… (2016)

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    Article

    Production of recombinant human interleukin-38 and its inhibitory effect on the expression of proinflammatory cytokines in THP-1 cells

    Interleukin (IL)-38 is the latest member of the IL-1 cytokine family. However, as a result of lacking efficient method to generate relatively large quantity of IL-38, its precise functions are poorly understoo...

    X. L. Yuan, Y. Li, X. H. Pan, M. Zhou, Q. Y. Gao, M. C. Li in Molecular Biology (2016)

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    Article

    Soluble expression and one-step purification of recombinant mouse interferon-λ3 in Escherichia coli

    Interferon (IFN)-λ3, a member of the type III IFN family, is a pleiotropic cytokine that exhibits potent antiproliferative, antiviral, and immunoregulatory activities. For further functional study of IFN-λ3, w...

    Y. Q. Wang, M. Zhou, L. M. Zeng, Q. Y. Gao, X. L. Yuan, Y. Li in Biochemistry (Moscow) (2015)

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    Article

    Diffusion Studies of Cu in Si and Low-k Dielectric Materials

    Experimental results are presented on the diffusion of Cu in silicon and Black Diamond¶ (BD). Cu coated silicon samples, with and without the BD layer, are annealed at various temperatures and times. It is con...

    K. Prasad, X. L. Yuan, C. M. Tan, D. H. Zhang, C. Y. Li in MRS Online Proceedings Library (2011)

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    Article

    Effects of Chemical Treatment on the Luminescence of ZnO

    The effects of chemical treatment on the luminescence of ZnO were investigated by cathodoluminescence. For this purpose, ZnO ceramics and O- and Zn-terminated faces of ZnO single crystals were studied. The sam...

    B. Dierre, X. L. Yuan, N. Armani, F. Fabbri, G. Salviati in Journal of Electronic Materials (2010)

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    Article

    A simple, fast, solvent-free method for the determination of volatile compounds in Magnolia grandiflora linn

    Magnolia grandiflora Linn belonging to the Magnoliaceae family has been used to treat hypertension for many years in China. Based on microwave-assisted extraction (MAE) and headspace soli...

    Z. Q. Fan, S. B. Wang, R. M. Mu, X. R. Wang, S. X. Liu in Journal of Analytical Chemistry (2009)

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    Article

    Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN

    We have studied the effect of the electron beam irradiation on ZnO and GaN by using cathodoluminescence (CL). The bandedge emissions of ZnO and GaN usually decrease during CL observation, but they can increase...

    B. Dierre, X. L. Yuan, Y. Z. Yao in Journal of Materials Science: Materials in… (2008)

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    Article

    Luminescence distribution of Yb-doped Ca-α-SiAlON phosphors

    Luminescence properties of Yb-doped Ca-α-SiAlON phosphors with composition of Ca1−xYbxSi12−(m+n)Alm+nOnN16−n were investigated by using cathodoluminescence (CL). The ratio of Yb to Ca was kept constant while the ...

    B. Dierre, X.L. Yuan, N. Hirosaki, T. Kimura, R-J. **e in Journal of Materials Research (2008)

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    Article

    Improvement of metal–ferroelectric–silicon structures without buffer layers between Si and ferroelectric films

    Si-based metal–ferroelectric–semiconductor (MFS) structures without buffer layers between Si and ferroelectric films have been developed by depositing SrBi2Ta2O9 (SBT) directly on n-type (100)-oriented Si. Some e...

    W.P. Li, Y.M. Liu, R. Zhang, J. Chen, P. Cheng, X.L. Yuan, Y.G. Zhou in Applied Physics A (2001)

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    Article

    Impact of the device scaling on the low-frequency noise in n-MOSFETs

    The impact of device scaling on modern MOS technology is discussed in terms of the random telegraph signals (RTSs) and low-frequency noise in n-MOSFETs with gradually decreased channel widths. RTSs with very l...

    H.M. Bu, Y. Shi, X.L. Yuan, Y.D. Zheng, S.H. Gu, H. Majima in Applied Physics A (2000)