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    Article

    Bistable Defects Induced in GaAs by H2 Plasma Process

    We have studied the effect of an H2 plasma (150 W ; 150°C ; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy , we have shown that t...

    X. Boddaert, D. Vuillaume, D. Stievenard, J. C. Bourgoin… in MRS Online Proceedings Library (1989)

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    Article

    Thermal Stability of EL2 in GaAs

    Different samples originating from the same LEC ingot have been used in order to determine the variation of the EL2 concentration versus depth after different types of thermal annealing ( 450 and 850°C : the t...

    X. Boddaert, X. Letartre, D. Stievenard, J. C. Bourgoin in MRS Online Proceedings Library (1988)