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  1. No Access

    Article

    Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate

    It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-pattemed Si(100) or Si(113) substrates with a V-shaped or U-shaped surface profile, respectively. The ...

    V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin… in Technical Physics (2023)

  2. No Access

    Article

    Initial Stages of Growth of the GaN(11 \(\bar {2}\) 2) Layer on a Nano-structured Si(113) Substrate

    scanning electron microscopy was used to study of the initial stages of the formation of a semipolar GaN(11 \(\bar {2}\) ...

    V. N. Bessolov, E. V. Konenkova, S. N. Rodin in Semiconductors (2023)

  3. No Access

    Article

    Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity

    A study is performed of the advantages of synthesizing layers of AlN via gas-phase chloride epitaxy and layers of GaN via organometallic epitaxy on a nanostructured Si(100) substrate. It is shown that when AlN...

    V. N. Bessolov, E. V. Konenkova… in Bulletin of the Russian Academy of Science… (2022)

  4. No Access

    Article

    Deformation of Semipolar and Polar Gallium Nitride Synthesized on a Silicon Substrate

    Results from studying deformation are obtained for semipolar GaN(11–22) grown on a nanostructured Si(113) substrate and polar GaN(0001) grown on a flat Si(111) substrate. A comparison of the structures of semi...

    V. N. Bessolov, M. E. Kompan… in Bulletin of the Russian Academy of Science… (2022)

  5. No Access

    Article

    Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy

    We report on the fabrication of nonpolar GaN(11‒20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase epitaxy on an r-Al2O3 substrate. It is shown that th...

    V. N. Bessolov, E. V. Konenkova, N. V. Seredova, V. N. Panteleev… in Semiconductors (2022)

  6. No Access

    Article

    Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate

    Scanning electron microscopy is used for studies of the initial stages of the formation of semipolar AlN (10 \(\bar {1}\) ...

    V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin in Semiconductors (2021)

  7. No Access

    Article

    Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates

    The microstructure of gallium nitride epitaxial layers synthesized by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapour deposition (MOCVD) on nanoprofiled NP‒Si(001) substrates with and witho...

    A. V. Myasoedov, N. A. Bert, V. N. Bessolov in Crystallography Reports (2021)

  8. No Access

    Article

    Formation of Semipolar Group-III-Nitride Layers on Textured Si(100) Substrates with Self-Forming Nanomask

    The epitaxial growth of AlN and GaN layers is investigated using metalorganic vapor-phase epitaxy on a Si(100) substrate, on the surface of which a V-shaped nanostructure with elements of sub-100-nm size (NP-S...

    V. N. Bessolov, E. V. Konenkova, S. N. Rodin, D. S. Kibalov… in Semiconductors (2021)

  9. No Access

    Article

    Plastic Relaxation of Stressed Semipolar AlN( \(10\bar {1}1\) ) Layer Synthesized on a Nanopatterned Si(100) Substrate

    Plastic relaxation of a stressed semipolar AlN( \(10\bar {1}1\) ) layer synthesized on a nanopattern...

    V. N. Bessolov, E. V. Konenkova, V. N. Panteleev in Technical Physics (2020)

  10. No Access

    Article

    Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering

    Epitaxial aluminum nitride (AlN) layers on Si(111) substrates have been grown by sequential application of several techniques including reactive magnetron sputter deposition to a thickness of 20 nm, metalorgan...

    V. N. Bessolov, N. D. Gruzinov, M. E. Kompan, E. V. Konenkova… in Technical Physics Letters (2020)

  11. No Access

    Article

    Hydride Vapor-Phase Epitaxy of a Semipolar AlN(10\(\bar {1}\)2) Layer on a Nanostructured Si(100) Substrate

    We propose a method for the synthesis of hexagonal AlN layer on Si(100) substrate with a V-groove nanostructured surface where the angle between the sloped nanoridge surface and Si(100) plane amounts to 47°. I...

    V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev in Technical Physics Letters (2020)

  12. No Access

    Article

    Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers

    Transmission electron microscopy was used to study the interaction of a + c and a dislocations in a thick (14 μm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C-SiC/Si(001) template. It is shown...

    L. M. Sorokin, M. Yu. Gutkin, A. V. Myasoedov, A. E. Kalmykov… in Physics of the Solid State (2019)

  13. No Access

    Article

    Properties of Semipolar GaN Grown on a Si(100) Substrate

    Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organi...

    V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin… in Semiconductors (2019)

  14. No Access

    Article

    Epitaxy of GaN(0001) and GaN(10 \(\bar {1}\) 1) Layers on Si(100) Substrate

    Two different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 \(\bar {1}\) ...

    V. N. Bessolov, M. E. Kompan, E. V. Konenkova, V. N. Panteleev… in Technical Physics Letters (2019)

  15. No Access

    Article

    Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy

    Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and t...

    V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, S. D. Konenkov… in Technical Physics (2019)

  16. No Access

    Article

    Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate

    We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for met...

    V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. N. Rodin… in Technical Physics Letters (2018)

  17. No Access

    Article

    Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

    We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silic...

    V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, T. V. L’vova… in Technical Physics Letters (2018)

  18. No Access

    Article

    Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

    The effect of changing the misfit dislocation propagation direction during GaN layer growth on the AlN/SiC/Si(111) structure surface is detected. The effect is as follows. As the GaN layer growing on AlN/SiC/S...

    S. A. Kukushkin, A. V. Osipov, V. N. Bessolov… in Physics of the Solid State (2017)

  19. No Access

    Article

    Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    A new effect of the n-and p-type do** of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the ...

    V. N. Bessolov, A. S. Grashchenko, E. V. Konenkova… in Physics of the Solid State (2015)

  20. No Access

    Article

    Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

    A new method of synthesis of semipolar gallium nitride on a silicon substrate using the technology of solid-phase epitaxy of 3C-SiC nanocrystals has been suggested. It has been demonstrated that application of...

    V. N. Bessolov, E. V. Konenkova, S. A. Kukushkin… in Technical Physics Letters (2014)

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