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  1. No Access

    Article

    Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface

    In this work, the effects of post-deposition annealing in forming gas ambient on the structure of the Al2O3/GaN interface are investigated. Using capacitance–voltage (C–V) and conductance–frequency (G–f) measurem...

    B. McEwen, I. Mahaboob, E. Rocco, K. Hogan, V. Meyers… in Journal of Electronic Materials (2021)

  2. No Access

    Article

    Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching

    A non-thermal method for removal of surface damage created by dry etching has previously been documented or n-GaN, but no such effort has been reported for p-GaN. In this study, Ga-polar p-GaN films were subjecte...

    V. Meyers, E. Rocco, K. Hogan, S. Tozier, B. McEwen… in Journal of Electronic Materials (2020)

  3. No Access

    Article

    Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers

    Characterization of three vendor’s bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: scanning electron microscopy, secondary ion ...

    M. Gaddy, V. Kuryatkov, V. Meyers, D. Mauch, J. Dickens, A. Neuber… in MRS Advances (2018)