Skip to main content

and
  1. No Access

    Article

    GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

    In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...

    V. A. Sukhoveyev, V. A. Ivantsov, I. P. Nikitina in MRS Online Proceedings Library (2012)

  2. Article

    GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

    In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...

    V. A. Sukhoveyev, V. A. Ivantsov in MRS Internet Journal of Nitride Semiconduc… (2000)