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  1. Article

    Open Access

    Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

    Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an...

    A. George, M. V. Fistul, M. Gruenewald, D. Kaiser… in npj 2D Materials and Applications (2021)

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  2. No Access

    Article

    Control of octahedral rotations via octahedral connectivity in an epitaxially strained [1 u.c.//4 u.c.] LaNiO3/LaGaO3 superlattice

    For ABO3 perovskites, the magnetic and electronic properties couple strongly to the BO6 octahedral rotations and distortions. Therefore, precise control of the octahedral rotations and distortions via epitaxial s...

    H. Y. Qi, M. K. Kinyanjui, X. D. Chen, J. Biskupek… in Journal of Materials Science (2016)

  3. No Access

    Article

    Local octahedral rotations and octahedral connectivity in epitaxially strained LaNiO3/LaGaO3 superlattices

    For ABO3 perovskites, octahedral rotations and distortions couple strongly to the functional properties. However, in short period perovskite superlattices, the characterization of the octahedral behavior remains ...

    H. Y. Qi, M. K. Kinyanjui, J. Biskupek, D. Geiger… in Journal of Materials Science (2015)

  4. No Access

    Article

    Self-assembly of a sulphur-terminated graphene nanoribbon within a single-walled carbon nanotube

    Single-walled carbon nanotubes are shown to template the self-assembly of graphene nanoribbons inside the tubes on electron-beam irradiation of a random mixture of precursors containing C and S atoms. The nano...

    A. Chuvilin, E. Bichoutskaia, M. C. Gimenez-Lopez, T. W. Chamberlain… in Nature Materials (2011)

  5. No Access

    Article

    High-resolution transmission electron microscopy of heteroepitaxial barium strontium titanate films grown on MgO substrates

    Nanoscale (5–100 nm) ferroelectric heteroepitaxial Ba0.8Sr0.2TiO3 films on MgO(001) substrates were studied by methods of high-resolution transmission electron microscopy using Tecnai G2 and FEI Titan 80–300 micr...

    O. M. Zhigalina, A. N. Kuskova… in Journal of Surface Investigation. X-ray, S… (2009)

  6. No Access

    Chapter and Conference Paper

    TEM characterization of magnetic Sm- and Co-nanocrystals in SiC

    This paper presents analytical TEM characterization of magnetic Sm- and Co-nanocrystals buried in SiC. High resolution TEM has been applied to analyse the lattice structure and crystallography of the nanocryst...

    J Biskupek, U Kaiser, H Lichte, A Lenk, G Pasold… in Microscopy of Semiconducting Materials (2005)

  7. No Access

    Article

    Direct observation of defect-mediated cluster nucleation

    Ion implantation is widely used to introduce electrically or optically active dopant atoms into semiconductor devices1. At high concentrations, the dopants can cluster and ultimately form deactivating precipitate...

    U. Kaiser, D.A. Muller, J.L. Grazul, A. Chuvilin, M. Kawasaki in Nature Materials (2002)

  8. No Access

    Article

    Transmission electron microscopy study of Ge implanted into SiC

    Hexagonal 6H– and 4H–SiC wafers were implanted with (1−1.5) × 1016 cm−2 germanium ions at room temperature and at 700 °C with subsequent annealing between 1000 and 1600 °C. Structural changes in the SiC matrix we...

    T. Gorelik, U. Kaiser, Ch. Schubert, W. Wesch, U. Glatzel in Journal of Materials Research (2002)

  9. No Access

    Article

    A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy

    The relationship between the defect microstructure of SiC films grown by solid-source molecular-beam epitaxy on 4H and 6H–SiC substrates and their growth conditions, for substrate temperatures ranging between ...

    U. Kaiser, I. Khodos, P. D. Brown, A. Chuvilin… in Journal of Materials Research (1999)

  10. No Access

    Article

    The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

    The effects of substrate cleaning, nitridation time, and substrate temperature in the range 800–1000 °C on the microstructure of AlN/Si(111) films grown by simultaneous plasma-assisted molecular beam epitaxy h...

    U. Kaiser, P. D. Brown, I. Khodos, C. J. Humphreys… in Journal of Materials Research (1999)

  11. No Access

    Article

    Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy

    Epitaxial growth of SiC on hexagonal (or α)-SiC(0001) has been performed by means of solid-source molecular beam epitaxy (MBE). The solid-source MBE growth conditions have been analyzed concerning the supersatura...

    A. Fissel, K. Pfennighaus, U. Kaiser, B. Schröter… in Journal of Electronic Materials (1999)

  12. No Access

    Article

    Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation

    The damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffrac...

    N. A. Sobolev, U. Kaiser, I. I. Khodos, H. Presting… in MRS Online Proceedings Library (1998)

  13. No Access

    Article

    A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

    The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures ...

    U. Kaiser, S. B. Newcomb, W. M. Stobbs, M. Adamik… in Journal of Materials Research (1998)

  14. No Access

    Article

    Fundamentals of Sputtered Neutral Mass Spectrometry

    Sputtered neutral mass spectrometry (SNMS) is a technique for elemental and isotopic analysis with excellent detection limits, with similar sensitivity for all elements and without substantial matrix effects. ...

    U. Kaiser, J. C. Huneke in MRS Bulletin (1987)

  15. No Access

    Chapter and Conference Paper

    Surface and In-Depth Analysis of Anodic Oxide Layers on Cd0.2Hg0.8Te

    Cadmium mercury telluride, Cd0.2Hg0.8Te (CMT), is well suited for detectors in the far infrared because of its band structure. The control of its electrical properties, however, poses some severe problems to both...

    A. Benninghoven, O. Ganschow, U. Kaiser, J. Neelsen… in Insulating Films on Semiconductors (1981)