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Open AccessInterface polarization model for a 2-dimensional electron gas at the BaSnO3/LaInO3 interface
In order to explain the experimental sheet carrier density n2D at the interface of BaSnO3/LaInO3, we consider a model that is based on the presence of interface polarization in LaInO3 which extends over 2 pseudoc...
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Open AccessIntentional polarity conversion of AlN epitaxial layers by oxygen
Nitride materials (AlN, GaN, InN and their alloys) are commonly used in optoelectronics, high-power and high-frequency electronics. Polarity is the essential characteristic of these materials: when grown along...
