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  1. No Access

    Article

    Improvement in the FF over 0.700 by controlling the interface quality

    In this study, the pn hetero-interface between Zn(O,S,OH)x buffer and Cu(InGa)(SSe)2 (CIGSS) surface layers is discussed in order to achieve the fill factor (FF) over 0.73 and the circuit efficiency of 16 % on ap...

    K. Kushiya, Y. Tanaka, H. Hakuma, S. Kijima, T. Aramoto… in MRS Online Proceedings Library (2009)

  2. No Access

    Article

    Improvement of the interface quality between Zn (O,S,OH)x buffer and Cu(InGa)(SeS)2 surface layers to enhance the fill factor over 0.700

    For realizing the proof of mass production capability or a move toward a GW/a production, 16%-efficiency project has been started setting the target of each parameter as Voc: 0.685 V/cell, FF: 0.735 and Jsc: 31.8...

    K. Kushiva, Y. Tanaka, H. Hakuma, Y. Goushi, S. Kijima… in MRS Online Proceedings Library (2009)