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Article
Improvement in the FF over 0.700 by controlling the interface quality
In this study, the pn hetero-interface between Zn(O,S,OH)x buffer and Cu(InGa)(SSe)2 (CIGSS) surface layers is discussed in order to achieve the fill factor (FF) over 0.73 and the circuit efficiency of 16 % on ap...
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Article
Improvement of the interface quality between Zn (O,S,OH)x buffer and Cu(InGa)(SeS)2 surface layers to enhance the fill factor over 0.700
For realizing the proof of mass production capability or a move toward a GW/a production, 16%-efficiency project has been started setting the target of each parameter as Voc: 0.685 V/cell, FF: 0.735 and Jsc: 31.8...