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Article
Band Gap and Drain Dielectric Pocket Engineered Si0.2Ge0.8/GaAs Junctionless TFET with Dual Dielectric Gate for Ambipolar Suppression and Electrical Performance Enhancement
In this paper, a dual dielectric drain—dual dielectric gate hetero-structure Si0.2Ge0.8/GaAs charge plasma-based junctionless TFET (DDD-DDG-HJLTFET) is proposed and analyzed. Here mixed concepts of the band gap, ...
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Article
Correction to: Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-based Junctionless-TFET
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Article
Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET
This paper reports on a charged plasma-based adjustable bandgap source/channel (So/Ch) interface using a new semiconductor compound (SiGe/ InAs) and bimaterial oxide (HfO2/SiO2) junctionless tunnel field-effect t...
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Article
Association of hypersensitivity and carriage of dermatophytes in clinically normal sites in patients withTinea cruris
Forty nine patients with mycologically confirmedTinea cruris were investigated for the association of hypersensitivity to trichophytin and the isolation of dermatophytes from clinically normal sites with chronici...
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Article
Amniotic membrane is an effective burn dressing material
Human amniotic membrane is a readily available biological dressing material used to treat burns. It not only prevents oozing of plasma from burn wounds but also relieves pain and controls sepsis. We used human...
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Article
Excitation of multilayered plasma columns with the ring of magnetic currents
The excitation of gaseous plasma column having semiconductor plasma columns on either side is studied with the excitation source being the ring of magnetic currents. The whole structure being cylindricalin sha...