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    An Optimized Process and Characterization of Pb(Zr,Ti)O3 Ferroelectric Capacitor for 1T/1C Ferroelectric RAM

    An optimized process of Pb(Zr,Ti)O3(PZT) ferroelectric capacitor has been investigated in order to develop a highly scaleable 1T/1C ferroelectric random access memory. The PZT ferroelectric capacitor, Pt/PZT/Pt s...

    Dong-Won Shin, Soo-Ho Shin, **-Woo Lee, Hong-Bae Park… in MRS Online Proceedings Library (1997)