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    Article

    Sn Doped FeNbSb Half-Heusler Compounds for Tuning Thermoelectric Performance

    p-Type FeNbSb-based half-Heusler compounds exhibit promising thermoelectric (TE) performance under high temperatures. Herein, the optimal sintering temperature and pressure of these compounds were determined. S.....

    Luo Yue, Shuqi Zheng, Wenlin Cui, Teng Fang, Lijun Wang in Journal of Electronic Materials (2020)

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    Enhanced Electronic Transport Properties of Se-Doped SnTe1−xSex Nanoparticles by Microwave-Assisted Solvothermal Method

    Pure lead-free SnTe has limited thermoelectric potentials because of its low Seebeck coefficients and its relatively large thermal conductivity. Herein, we report on the enhanced electronic transport propertie...

    Lijun Wang, Shuqi Zheng, Hong Chen in Journal of Electronic Materials (2017)

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    Validity of Rigid-Band Approximation in the Study of Thermoelectric Properties of p-Type FeNbSb-Based Half-Heusler Compounds

    Recently, we calculated the thermoelectric properties of p-type FeNbSb half-Heusler compounds by employing the rigid-band approximation (RBA) (Fang et al., RSC Adv 6:10507–10512, 2016). Traditionally, the RBA is ...

    Teng Fang, Shuqi Zheng, Tian Zhou, Hong Chen, Peng Zhang in Journal of Electronic Materials (2017)

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    Article

    High-Yield Synthesis, Controllable Evolution, and Thermoelectric Properties of Te/Bi2Te3 Heterostructure Nanostrings

    Te/Bi2Te3 heterostructure nanostrings composed of multiple hexagon Bi2Te3 nanosheets, which were strung together by Te nanowires, were rationally designed and synthesized via an in situ growth process. High-yield...

    Zhiliang Li, Shuqi Zheng, Yuzhuo Zhang, Hong Chen in Journal of Electronic Materials (2015)