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Shubham Anjankar
Image Processing and Computer Vision
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Chapter and Conference Paper
Comparison of Total Ionizing Dose Effect on Tolerance of SCL 180 nm Bulk and SOI CMOS Using TCAD Simulation
The long-term reliability of metal oxide semiconductor (MOS) devices in space technology depends on the total ionizing dose (TID) effect. In MOS technology, power consuming, expensive, and bulky triple modular...
