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Article
Extensive thermal-range simulation study of interface traps and oxide charges in an oxide-optimized MOS-capacitive radiation sensor for space applications
The present work investigates the performance of a simple capacitive radiation sensor under extreme thermal conditions. The sensor chosen is optimized for SCL 180 nm CMOS technology and offers an appreciable s...
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Article
Pencil graphite–turned graphene oxide for supercapacitor electrodes
Supercapacitors have drawn a lot of interest because of their incredibly high capacitance and practically limitless cycle life. Supercapacitor storages that can operate independently are extremely close. Light...
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Chapter and Conference Paper
Comparison of Total Ionizing Dose Effect on Tolerance of SCL 180 nm Bulk and SOI CMOS Using TCAD Simulation
The long-term reliability of metal oxide semiconductor (MOS) devices in space technology depends on the total ionizing dose (TID) effect. In MOS technology, power consuming, expensive, and bulky triple modular...
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Chapter and Conference Paper
Radiation Sensor Design for Mitigation of Total Ionizing Dose Effects
The electrical breakdown of oxides and oxide/semiconductor interfaces is one of the major reasons for failure of CMOS ICs, especially when they are exposed to high stress conditions like the space environment ...
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Article
Microfluidic Based Analyzer for Water Dissolved Arsenic (AsIII) Detection
Monitoring of toxic contaminants is very important for the preservation of the environment. Arsenic contamination of drinking water is a major global problem. Its maximum contamination limit (MCL) in drinking ...
