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Article
Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide
To develop low-power, non-volatile computing-in-memory device using ferroelectric transistor technologies, ferroelectric channel materials with scaled thicknesses are required. Two-dimensional semiconductors, ...
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Article
Open AccessTwisted oxide lateral homostructures with conjunction tunability
Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection...
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Article
Open AccessElectrical polarization induced by atomically engineered compositional gradient in complex oxide solid solution
Control of inhomogeneity in materials in order to avoid unexpected effects to the system remains a challenge. In this study, we seek to engineer inhomogeneity in materials and anticipate new properties. Throug...
