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  1. Article

    Open Access

    Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

    We investigated the lateral distribution of the equilibrium carrier concentration (n0) along the channel and the effects of channel length (L) on the source-drain series resistance (Rext) in the top-gate self-ali...

    Sae-Young Hong, Hee-Joong Kim, Dae-Hwan Kim, Ha-Yun Jeong… in Scientific Reports (2019)

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