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Oxidation of Gallium Nitride Epilayers in Dry Oxygen

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  1. Article

    Structural Properties of Laterally Overgrown GaN

    Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN ‘substrates’ by hydride vapor phase epitaxy (HVPE) have been investigated. The epitaxially lateral overgrowth of GaN on SiO2 are...

    R. Zhang, Y Shi, Y. G. Zhou, B. Shen… in MRS Internet Journal of Nitride Semiconduc… (2000)

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  2. Article

    Oxidation of Gallium Nitride Epilayers in Dry Oxygen

    The oxidation of GaN epilayers in dry oxygen has been studied. The 1-µm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition w...

    P. Chen, R. Zhang, X.F. Xu, Z.Z. Chen… in MRS Internet Journal of Nitride Semiconduc… (2000)

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