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  1. No Access

    Article

    Evolution of surface plasmon resonance with slab thickness in hybrid nano-structures of Au/InGaAs slab waveguide

    We report on the evolution of the surface plasmon (SP) and waveguide mode (WM) as the core thickness is varied in InGaAs slab waveguides covered by metallic sub-wavelength slit arrays. By comparing transmissio...

    S. H. Kim, C. M. Lee, D. W. Park, S. K. Noh, S. B. Sim, J. Kim… in Applied Physics B (2014)

  2. No Access

    Article

    Evolutional feature of InAs/GaAs quantum dots with coverages from submonolayer to a few monolayers

    In this study, we demonstrate InAs/GaAs submonolayer quantum dots (SQDs) with no wetting layer (WL) formed by using the self-assembling technique. An evolutional feature was observed in the photoluminescence s...

    Y. H. Kim, S. J. Kim, S. K. Noh, Jong S. Kim… in Journal of the Korean Physical Society (2012)

  3. No Access

    Article

    Spectroscopic anisotropy in laterally self-aligned quantum dots

    The spectroscopic features observed in laterally self-aligned InGaAs/GaAs quantum dots (QDs) are compared with those in isolated QDs. Though each aligned QD keeps an individual appearance analogous to that of ...

    J. W. Choe, J. O. Kim, S. K. Noh in Journal of the Korean Physical Society (2012)

  4. No Access

    Article

    Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

    We report on the comparison of mesa sidewall profiles of InAs/GaSb strained-layer superlattice (SLS) detector structures (λ 50% cutoff ≈ 14 μm at V bias = 0 V and T

    M. N. Kutty, E. Plis, A. Khoshakhlagh, S. Myers… in Journal of Electronic Materials (2010)

  5. No Access

    Article

    In situ HREM Study on the Thermal Stability of Atomic Layer Epitaxy Grown InAs/GaAs Quantum Dots

    Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy technique and the structure and the thermal stability of QDs have been studied by using high resolution electron microscopy wi...

    H. S. Kim, J. H. Suh, C. G. Park, S. J. Lee, S. K. Noh… in MRS Online Proceedings Library (2004)

  6. No Access

    Article

    Structural stability of low temperature grown InGaAs/GaAs heterostructure

    InGaAs/GaAs superlattice was grown by molecular beam epitaxy (MBE) on GaAs (100) substrate at low substrate temperature (250°C). The as-grown superlattice sample was then annealed at various temperatures for 1...

    Chanro Park, C. G. Park, Chae-Deok Lee, S. K. Noh in Journal of Electronic Materials (1997)

  7. No Access

    Article

    Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

    We have investigated anisotropic lattice relaxation and its mechanism of ZnSe epitaxial layer grown on (001) GaAs substrate by MBE. Double-crystal X-ray rocking curves for (004), {115} and {404} reflections we...

    C.S. Kim, S.K. Noh, H.J. Lee, Y.K. Cho, Y.I. Kim… in MRS Online Proceedings Library (1995)

  8. No Access

    Article

    Interfacial reactions of Si/Co films on GaAs

    J. S. Kwak, H. N. Kim, H. K. Baik, D. W. Shin… in Journal of Materials Science Letters (1995)

  9. No Access

    Article

    Interfacial Reactions of Co and Si/Co Films on GaAs

    Interfacial reactions of Co and Si/Co films on GaAs have been investigated using X-ray diffraction(XRD), Auger electron spectroscopy(AES), cross-sectional transmission electron microscopy(XTEM), microdiffracti...

    J. S. Kwak, H. K. Baik, J. I. Lee, S. K. Noh, D. W. Shin… in MRS Online Proceedings Library (1994)

  10. No Access

    Article

    The interactions between Si/Co films and GaAs(001) substrates

    Interfacial reactions of Si/Co films on (001) oriented GaAs substrate, in the temperature range 300–700°C for 30 min, have been investigated using a combination of x-ray diffraction, Auger electron spectroscop...

    J. S. Kwak, H. K. Baik, D. W. Shin, C. G. Park… in Journal of Electronic Materials (1994)

  11. No Access

    Article

    Magnetotransport and electric sub-band studies on a strained InAs0.3Po.7/InP single quantum well

    T. W. Kim, M. Jung, J. I. Lee, G. Ihm, S. K. Noh… in Journal of Materials Science Letters (1994)

  12. No Access

    Article

    Preparation of field-extracted plasma-grown oxide on InP

    S. K. Noh, E. E. Crisman, P. J. Stiles in Journal of Materials Science Letters (1989)

  13. No Access

    Article

    Properties of Hg1−x Cd x Te single crystals grown by THM

    K. M. Kim, S. R. Hahn, S. K. Noh, H. L. Park… in Journal of Materials Science Letters (1987)