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  1. No Access

    Chapter and Conference Paper

    Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well

    A high mobility single subband occupancy InSb/InAlSb quantum well was grown by molecular beam epitaxy. The low-temperature, high-field magnetotransport properties are measured as a function of gate bias. Spin-...

    W. R. Branford, A. M. Gilbertson, P. D. Buckle, L. Buckle… in Narrow Gap Semiconductors 2007 (2008)

  2. No Access

    Chapter and Conference Paper

    Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells

    We have used time resolved spectroscopy to measure the relaxation of spin polarisation in InSb/AlInSb quantum wells as a function of temperature and mobility. The results are consistent with the degenerate D’Y...

    K. L. Litvinenko, B. N. Murdin, S. K. Clowes, L. Nikzad… in Narrow Gap Semiconductors 2007 (2008)

  3. No Access

    Chapter and Conference Paper

    (S)TEM Characterisation of InAs/MgO/Co Multilayers

    The structural integrity, composition and interface quality of tunnel barriers in hybrid ferromagnet-semiconductor structures will have a significant effect on the properties of spintronic devices. We present ...

    D A Eustace, D W McComb, L Buckle, P Buckle… in Microscopy of Semiconducting Materials 2007 (2008)

  4. Article

    Open Access

    Si:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars

    Laboratory spectroscopy of atomic hydrogen in a magnetic flux density of 105 T (1 gigagauss), the maximum observed on high-field magnetic white dwarfs, is impossible because practically available fields are about...

    B.N. Murdin, Juerong Li, M.L.Y. Pang, E.T. Bowyer, K.L. Litvinenko… in Nature Communications (2013)

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