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  1. No Access

    Article

    Thermoresistive Semiconductor SiC/Si Composite Material

    A new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermis...

    S. K. Brantov, E. B. Yakimov in Semiconductors (2019)

  2. No Access

    Article

    High-Temperature Filter Based on Silicon Carbide for Aggressive Fluids and Gases

    In this paper, we developed a production method for items based on mesh silicon carbide that are suitable for cleaning aggressive fluids, melts, and gases from foreign inclusions at high operating temperatures...

    S. K. Brantov, D. N. Borisenko in Inorganic Materials: Applied Research (2018)

  3. No Access

    Article

    On a Possibility of the Overgrowth of Diamonds in the Hydrocarbon Atmosphere

    The possibility to increase sizes of diamond crystals at least 25 μm by means of their annealing at a temperature of 1450 K in a hydrocarbon atmosphere has been studied. The initial diamond crystals are incorp...

    S. K. Brantov, V. B. Efimov in Technical Physics (2018)

  4. No Access

    Article

    Physical properties of carbon films obtained by methane pyrolysis in an electric field

    A method of synthesizing carbon films on single-crystal silicon substrates by methane pyrolysis in an electrical field is suggested. The pressure and temperature arising in a working chamber when the substrate...

    S. K. Brantov, A. N. Tereshchenko, E. A. Shteinman, E. B. Yakimov in Technical Physics (2016)

  5. No Access

    Article

    Semiconductor behavior of nanocrystalline carbon

    The study of the characteristics of nanocrystalline carbon films produced by deposition onto single-crystal silicon substrates from the vapor phase during the pyrolysis of methane in an electric field shows th...

    S. K. Brantov in Semiconductors (2014)

  6. No Access

    Article

    Structural state and mechanical properties of nanocrystalline carbon films obtained by methane pyrolysis in electric field

    We describe a method of carbon film synthesis on single-crystalline silicon substrate, which is based on methane pyrolysis in electric field. The calculated values of pressures and temperatures developed durin...

    S. K. Brantov, S. I. Bozhko, I. A. Ryzhkin, I. M. Shmyt’ko… in Technical Physics Letters (2013)

  7. No Access

    Article

    Hydrogen sorption by carbon nanomaterials

    Hydrogen sorption by carbon nanomaterials has been investigated at a temperature of 298 K and pressure of 10 MPa by single and multiwalled nanotubes, graphitic nanofibers, and split graphite. The measurement e...

    A. V. Timonina, D. N. Borisenko, V. V. Kveder, N. N. Kolesnikov… in Russian Microelectronics (2011)

  8. No Access

    Article

    SEM Investigation of the electrical properties of silicon ribbons

    The structure and electrical properties of silicon ribbons grown on a substrate by the Ribbon Growth on Substrate (RGS) method method for solar cell applications have been investigated in secondary electron an...

    S. K. Brantov, O. V. Feklisova… in Journal of Surface Investigation. X-ray, S… (2011)