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  1. No Access

    Article

    Combined Application of Section and Projection Topography to Defect Analysis in PVT-Grown 4H-SiC

    The combined application of section and projection topography carried out using synchrotron white beam radiation can be a powerful tool for the determination of the three-dimensional configurations of defects ...

    H. Wang, F. Wu, S. Byrappa, S. Shun, B. Raghothamachar… in MRS Online Proceedings Library (2012)

  2. No Access

    Article

    Synchrotron Topography Studies of Growth and Deformation-Induced Dislocations in 4H-SiC

    Synchrotron topography studies are presented of the behavior of growth dislocations and deformation-induced dislocations in 4H-SiC single crystals. The growth dislocations include those in threading orientatio...

    M. Dudley, H. Wang, F. Wu, S. Byrappa, S. Shun… in MRS Online Proceedings Library (2012)

  3. No Access

    Article

    Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals

    Synchrotron White Beam X-ray Topography studies are presented of dislocation behavior and interactions in a new generation of one hundred millimeter diameter, 4H-SiC wafers grown using Physical Vapor Transport...

    S. Byrappa, H. Wang, F. Wu, Y. Zhang, B. Raghothamachar… in MRS Online Proceedings Library (2010)