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14 Result(s)

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  1. No Access

    Article

    Different STM images of the superstructure on a clean Si(133)-6 × 2 surface

    New detailed scanning tunneling microscopy images of the superstructure on an atomically clean Si(133)-6 × 2 surface are obtained. Similarities and differences with previously reported images are discussed. On...

    S. A. Teys in JETP Letters (2017)

  2. No Access

    Article

    Features of atomic processes at the formation of a wetting layer and nucleation of three-dimensional Ge islands on Si(111) and Si(100) surfaces

    The intermediate stages of the formation of a Ge wetting layer on Si(111) and Si(100) surfaces under quasiequilibrium grow conditions have been studied by means of scanning tunneling microscopy. The redistribu...

    S. A. Teys in JETP Letters (2013)

  3. No Access

    Article

    Influence of the Si(111)-7×7 surface reconstruction on the diffusion of strontium atoms

    The diffusion of strontium atoms on the Si(111) surface at room temperature has been investigated using scanning tunnel microscopy and simulation carried out in terms of the density functional theory and the M...

    R. A. Zhachuk, S. A. Teys, B. Z. Olshanetsky in Journal of Experimental and Theoretical Ph… (2011)

  4. No Access

    Article

    Formation of strontium atomic chains on the singular and stepped Si(111) surfaces

    The surface structures 3 × 2, 5 × 2, 7 × 2, and 9 × 2 formed on the Si(111) plane during adsorption of submonolayer strontium have been investigated using scanning tunneling microscopy. The experimental data o...

    R. A. Zhachuk, S. A. Teys, B. Z. Olshanetsky in Physics of the Solid State (2010)

  5. No Access

    Article

    Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

    The results of the structural and morphological studies of Ge growth on a Si(111) surface at the initial stages of epitaxy by means of scanning tunneling microscopy and high-resolution transmission electron mi...

    S. A. Teys, E. M. Trukhanov, A. S. Ilin, A. K. Gutakovskii… in JETP Letters (2010)

  6. No Access

    Article

    Initial stages of germanium growth on the Si(7 7 10) surface

    The initial stages of germanium growth on the Si(7 7 10) surface containing regular atomic steps with a height of three interplanar spacings were investigated using scanning tunneling microscopy. This surface ...

    R. A. Zhachuk, K. N. Romanyuk, S. A. Teys, B. Z. Olshanetsky in Physics of the Solid State (2009)

  7. No Access

    Article

    Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures

    The effect of pulsed irradiation by a low-energy (50–250 eV) ion beam with a pulse duration of 0.5 s on the nucleation and growth of three-dimensional germanium islands during molecular-beam heteroepitaxy of G...

    J. V. Smagina, V. A. Zinovyev… in Journal of Experimental and Theoretical Ph… (2008)

  8. No Access

    Article

    Scanning tunneling microscopy study of the growth and self-organization of Ge nanostructures on vicinal Si(111) surfaces

    The initial stages of Ge growth on Si(111) vicinal surfaces tilted in the [ \(\overline 1 \overline 1 2\) ] and [ ...

    K. N. Romanyuk, S. A. Teys, B. Z. Olshanetsky in Physics of the Solid State (2006)

  9. No Access

    Article

    Raman E 1 and E 1 + Δ1 resonances in a system of unstrained germanium quantum dots

    The positions and shapes of the Raman E 1 and E 1 + Δ1 resonances of optical phonons are studied as functions of the size of unstrained germanium quantum dots. The quantum dots are...

    A. B. Talochkin, S. A. Teys… in Journal of Experimental and Theoretical Physics (2006)

  10. No Access

    Article

    Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide

    The experimental results of an investigation into the initial stages of growth of a germanium film on an atomically clean oxidized silicon surface are reported. It is shown that the growth of the germanium fil...

    A. I. Nikiforov, V. V. Ul’yanov, O. P. Pchelyakov, S. A. Teys… in Physics of the Solid State (2005)

  11. No Access

    Article

    Synthesis of ordered Ge-Si heterostructures containing ultrasmall germanium nanoclusters

    Different techniques for the fabrication of structures containing ensembles of ultrasmall germanium nanoclusters distributed with a high density over the substrate surface are discussed. How to control the mor...

    Yu. B. Bolkhovityanov, S. Ts. Krivoshchapov, A. I. Nikiforov… in Physics of the Solid State (2004)

  12. No Access

    Article

    Growth and structure of Ge nanoislands on an atomically clean silicon oxide surface

    Experimental data on the formation of self-organized Ge islands on an atomically clean oxidized Si(100) surface are presented. On the oxidized silicon surface, the Volmer-Weber growth mechanism is operative ra...

    A. I. Nikiforov, V. V. Ul’yanov, O. P. Pchelyakov, S. A. Teys… in Physics of the Solid State (2004)

  13. No Access

    Article

    Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

    The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the formation of a Ge wetting layer on the Si...

    S. A. Teys, A. B. Talochkin, K. N. Romanyuk… in Physics of the Solid State (2004)

  14. No Access

    Article

    Optical phonons in Ge quantum dots obtained on Si(111)

    The Raman light scattering from optical phonons of Ge quantum dots grown by molecular beam epitaxy on a Si(111) surface is studied. A series of Raman lines related to the quantization of phonon spectrum is obs...

    A. B. Talochkin, S. A. Teys in Journal of Experimental and Theoretical Physics Letters (2002)