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Article

An analytical model of P ⁺InAsSbP/n ⁰-InAs/n ⁺-InAs single heterojunction photodetector for 2.4–3.5 μm region

In this paper, a surface illuminated InAsSbP/InAs photodetector has been analyzed for operation in 2.0–3.5 μm wavelength region. The influence of different dark current components on the resistance-area product (...

R.K. Lal, P. Chakrabarti in Optical and Quantum Electronics (2004)