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Chapter and Conference Paper
Work Function Estimation of Copper-Doped ZnO Thin Film
In this article we report Copper-doped ZnO (CZO) based heterojunction diodes. The CZO thin film (p-type) has been grown over a n and p-Si substrate using sol-gelspin coating method. X-ray diffraction study spe...
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Article
Experimental characterization of electrochemically polymerized polycarbazole film and study of its behavior with different metals contacts
In this paper, we present the method of fabrication, experimental characterization, and comparison of electrical parameters of semiconducting polycarbazole film with different rectifying metals contacts. Elect...
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Article
Fabrication and characterization of hydrothermally grown MgZnO nanorod films for Schottky diode applications
Pure and Mg doped ZnO nanorod films were grown on p type silicon substrates by two step hydrothermal method. A solution of 60 mM concentration (by mixing zinc acetate with ethyl alcohol) is made for seed layer...
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Article
Thickness dependent study of RF sputtered ZnO thin films for optoelectronic device applications
This work reports thickness dependent structural and optical studies of ZnO thin films grown over p-type silicon (Si) and glass substrates using RF sputtering technique. The effect of variation of thickness on di...
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Article
Comparative Study of As-Deposited ZnO Thin Films by Thermal Evaporation, Pulsed Laser Deposition and RF Sputtering Methods for Electronic and Optoelectronic Applications
Zinc oxide (ZnO) thin films have been deposited on Si substrate and glass substrate using thermal evaporation, pulsed laser deposition (PLD) and radio-frequency (RF) sputtering methods. The structural, surface...
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Article
Fabrication and experimental characterization of a sol–gel derived nanostructured n-ZnO/p-Si heterojunction diode
In this paper, fabrication and characterization of a sol–gel derived n-ZnO nanoparticle/p-Si heterojunction diode has been presented. A strong diffraction peak (002) obtained from XRD spectra of sol–gel derive...
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Article
Open AccessmTORC2 controls cancer cell survival by modulating gluconeogenesis
For rapid tumor growth, cancer cells often reprogram the cellular metabolic processes to obtain enhanced anabolic precursors and energy. The molecular changes of such metabolic rewiring are far from establishe...
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Article
Open AccessGluconeogenesis combats cancer: opening new doors in cancer biology
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Article
ATLAS simulation of a laser diode for free space optical communication (FSOC) in mid-infrared spectral region
In this paper, simulation studies on an N+-InAs0.61Sb0.13P0.26/n0-InAs0.97Sb0.03/P+-InAs0.61Sb0.13P0.26 double heterostructure laser diode suitable for use as a source in a free space optical communication system...
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Article
Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition
The present work involves the fabrication and characterization of two different metal/insulator/semiconductor (MIS) structures: Pd/TiO2/Si and Pd/TiO2/SiO2/Si. The TiO2 thin films on the n-type Si 〈100〉 substrate...
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Article
Tailoring the Structural and Optoelectronic Properties of Al-Doped Nanocrystalline ZnO Thin Films
This paper describes the effect of Al do** (0 at.% to 6 at.%) on the structural and optoelectronic properties of nanocrystalline ZnO thin films deposited by thermal evaporation. X-ray diffraction patterns co...
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Article
Effect of post annealing on structural and optical properties of ZnO thin films deposited by vacuum coating technique
We report the effect of annealing temperature on structural, electrical and optical properties of polycrystalline zinc oxide thin films grown on p-type silicon (100) and glass substrates by vacuum coating tech...
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Article
Histophysiological studies on the saccus vasculosus of Macrognathus aculeatum (Bloch)
The cells lining the saccus vasculosus epithelium and their role in physiological activities in Indian freshwater teleost, Macrognathus aculeatum (Bloch) have been studied by employing various staining techniques...
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Article
Analytical modeling and ATLAS simulation for a homojunction LED in the mid-infrared spectral region
A generic analytical model and the ATLAS simulation of a homojunction light emitting diode (LED) based on p+-InAs0.91Sb0.09/n0-InAs0.91Sb0.09/n+-InAs0.91Sb0.09 materials grown on lattice matched p+-GaSb substrate...
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Article
Modeling and simulation of heterojunction photovoltaic detector based on InAs0 .15Sb0.85 for free space optical communication
In this paper we report a theoretical model of InAs1−x Sb x based photovoltaic detector for characterising the device in respect of RA product, voltage r...
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Article
Sensitivity analysis of an HgCdTe based photovoltaic receiver for long-wavelength free space optical communication systems
We examine theoretically the performance of an Hg0.77Cd0.23Te based p-n photodetector/HFET optical receiver due to its possible application at 10.6 μm free space optical communication system at high bit rate. A r...
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Article
InAs/InAsSb Avalanche Photodiode (APD) for applicaions in long-wavelength infrared region
A generic numerical model of a long-wavelength Avalanche Photodiode (APD) based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoreti...
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Article
Modeling and analysis of photoconductive detectors based on Hg1-x Cd x Te for free space optical communication
In this paper we report a theoretical analysis of a long wavelength photoconductive detector for characterizing and optimizing the device in respect of voltage responsivity, quantum efficiency, detectivity and...
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Article
Analytical Simulation of an InAsSb Photovoltaic Detector for Mid-Infrared Applications
A generic model of a mid-infrared photodetector based on a narrow bandgap semiconductor has been developed. The model has been applied for analysis and simulation of an InAs0.89Sb0.11 photovoltaic detector for op...
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Article
An analytical model of P +InAsSbP/n 0-InAs/n +-InAs single heterojunction photodetector for 2.4–3.5 μm region
In this paper, a surface illuminated InAsSbP/InAs photodetector has been analyzed for operation in 2.0–3.5 μm wavelength region. The influence of different dark current components on the resistance-area product (...
