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A study of cracking in GaN grown on silicon by molecular beam epitaxy
It is observed that GaN layers grown on silicon substrates often crack. The crack characteristics in hexagonal GaN films on Si(111) has been characterized using scanning electron microscopy and Nomarski optica...
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Article
Investigations on the nucleation parameters of InGaAs grown on InP during LPE
The initial stages of LPE growth of the InGaAs ternary compound on an InP substrate were analysed using the classical heterogeneous nucleation theory, incorporating lattice mismatch between the grown alloy and...