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  1. Article

    Si1-x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

    The utility of energy sequencing for extracting an accurate matrix level interface profile using ultra-low energy SIMS (uleSIMS) is reported. Normally incident O2 + over an energy range of...

    R. J. H. Morris, T. P. A. Hase… in Journal of The American Society for Mass S… (2016)

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    Cyclotron Resonance of Extremely Conductive 2D Holes in High Ge Content Strained Heterostructures

    Cyclotron resonance has been observed in steady and pulsed magnetic fields from high conductivity holes in Ge quantum wells. The resonance positions, splittings and linewidths are compared to calculations of t...

    O. A. Mironov, M. Goiran, J. Galibert, D. V. Kozlov… in Journal of Low Temperature Physics (2010)

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    Diffusion of ion-implanted Boron and Silicon in Germanium

    The diffusion of B and Si in Ge is studied using implantation do**. Concentration profiles after furnace annealing in the temperature range 800-900 °C were obtained using high resolution secondary ion mass s...

    Suresh Uppal, A. F. W. Willoughby, J. M. Bonar… in MRS Online Proceedings Library (2003)

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    Diffusion of Boron in Germanium and Si1-xGex (x>50%) alloys Suresh Uppal

    Boron diffusion in germanium and relaxed Si1-xGex alloys with Ge content x>50% is reported. Relaxed SiGe layers were grown by LEPECVD and boron was introduced using ion implantation. Samples were given equal ther...

    A. F. W. Willoughby, J. M. Bonar, N. E. B. Cowern… in MRS Online Proceedings Library (2003)

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    Turn-Over and Distribution of Water in Desert Camels, Sheep, Cattle and Kangaroos

    DR. W. V. MacFARLANE, R. J. H. MORRIS, BETH HOWARD in Nature (1963)