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Article
RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications
For low-power circuit applications, the performance of the circuit is significantly influenced by the MOSFET's analog/RF and non-linearity properties. Gate-all-around junction-less accumulation mode MOSFETs (J...
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Article
Dielectric pocket engineered, gate induced drain leakages (GIDL) and analog performance analysis of dual metal nanowire ferroelectric MOSFET (DPE-DM-NW-Fe FET) as an inverter
This research article presents a simulation study on a dielectric pocket engineered dual metal nanowire ferroelectric (DPE-DM-NW-Fe FET) MOSFET. The aim is to mitigate the Gate-Induced Drain Leakage (GIDL) eff...
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Article
Correction: Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4 H-SiC)
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Article
Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications
The small signal model of MOSFET is a must for implementation of analog/digital circuits. The non-quasi-static (NQS) model is well known and provides accurate parameters for MOSFET. In the present work, extrin...
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Article
Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)
In this manuscript, analog/RF performance, linearity, harmonic distortion, small signal AC performance and scattering parameter (S-parameters) metrics of gate-stack DM nanowire (NW) FET (4H-silicon carbide) ha...
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Article
Physics based analytical modeling and simulation of Cylindrical Junctionless Nanowire Ferroelectric field effect transistor (CJNFe-FET) for enhanced analog performance
An analytical model has been examined in this work for dielectric engineered gate stack high K cylindrical junctionless nanowire ferrolectric field effect transistor (HCJNFe FET). HCJNFe FET (High K junctionle...
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Article
Microwave performance assessment of AlGaN/GaN/AlGaN DH-HEMT in terms of scattering parameters and various power gains
This paper presents a comprehensive investigation of microwave performance for symmetrically doped AlGaN/GaN/AlGaN DH-HEMT in terms of scattering parameters and power gains. A charge control based small signal...
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Article
Small signal model parameter extraction for cylindrical silicon-on-insulator Schottky barrier MOSFET
Small-signal model of the MOSFET is an equivalent circuit of its electric components, which defines the electrical characteristics of a MOSFET. The non-quasi-static (NQS) model is one of the most accurate smal...
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Article
Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor
This paper presents for the first time an analytical model of a dielectric modulated surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows excellent improvement in sensitivity whe...
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Article
Characterisation and Analysis of Schottky-Tube FET exhibiting Superior Characteristic Parameters
The Schottky tube field-effect transistor (ST-FET) analytical model for surface potential, electric field, and subthreshold current evolved using the superposition method. The surface potential across the chan...
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Chapter and Conference Paper
Gate All Around 22 nm SOI Schottky Barrier MOSFET with High ION/IOFF Current Ratio for Low-Power Digital and Analog Circuit Applications
The design of low-power and high-speed circuits must require a high ION/IOFF ratio. In the present work, SOI Schottky barrier MOSFET is investigated for low-power digital and analog circuits applications. Static ...
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Article
Radiation-Sensitive AlGaN/GaN MOS-HEMT-Based Dosimeter
An AlGaN/GaN MOS-HEMT (metal oxide semiconductor–high electron mobility transistor)-based dosimeter has been proposed to demonstrate and evaluate the impact of absorbed doses of radiations by virtue of interfa...
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Article
Enhanced Analog Performance and High-Frequency Applications of Dielectric Engineered High-K Schottky Nanowire FET
In this paper, Gallium Nitride (GaN) based Dielectric Engineered High-K GaN Schottky Nanowire Field Effect Transistor (DE-HK-GaN-SNWFET) is examined for enhancing analog performance for high-frequency applicat...
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Article
Performance Analysis of Drain Pocket Hetero Gate Dielectric DG-TFET: Solution for Ambipolar Conduction and Enhanced Drive Current
In this brief, we explored the impact of drain pocket (DP) along with heterogenous gate dielectric (HD) on the performance of double gate tunnel field effect transistor (DGTFET). We investigated that an area a...
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Article
Recent Technological Advancement in Surrounding Gate MOSFET for Biosensing Applications - a Synoptic Study
Advancement in the technology and device engineering has a huge impact on the evolution of biosensors and their designing principles. Various biosensors have been designed and reported depending upon the appli...
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Article
Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps
An analytical approach incorporating traps (donor type) in the AlGaN layer at the top and bottom heterointerface is proposed to determine threshold voltage (Vth), net sheet carrier concentration (ns) and drain cu...
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Article
Dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET for improved analog performance for high frequency application
In this paper dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET is analyzed for improvement in analog performance for applications with high frequency, usi...
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Article
Applicability of Field Plate in Double Channel GaN HEMT for Radio-Frequency and Power-Electronic Applications
In the present communication, for the first time, applicability of Field Plate (FP) for Double Channel (DC) AlGaN/GaNHEMT is demonstrated. Impact of design space parameters such as field plate length (LFP) and Si...
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Article
Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications
An analytical model for determining intrinsic short-circuit admittance (Y) parameters of AlGaN/GaN/AlGaN Double Heterostructure (DH) High Electron Mobility Transistor (HEMT) is presented. These Y parameters ob...
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Article
Analytical modeling of dual-metal gate stack engineered junctionless accumulation-mode cylindrical surrounding gate (DMGSE-JAM-CSG) MOSFET
This paper proposes a physics-based 2-D analytical model for a dual- material gate stack engineered junctionless accumulation-mode cylindrical surrounding gate (DMGSE-JAM-CSG) MOSFET. Analytical modeling is pe...
