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  1. No Access

    Article

    RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

    For low-power circuit applications, the performance of the circuit is significantly influenced by the MOSFET's analog/RF and non-linearity properties. Gate-all-around junction-less accumulation mode MOSFETs (J...

    Jitender Kumar, Aparna N. Mahajan, S. S. Deswal, Amit Saxena… in Microsystem Technologies (2024)

  2. No Access

    Article

    Dielectric pocket engineered, gate induced drain leakages (GIDL) and analog performance analysis of dual metal nanowire ferroelectric MOSFET (DPE-DM-NW-Fe FET) as an inverter

    This research article presents a simulation study on a dielectric pocket engineered dual metal nanowire ferroelectric (DPE-DM-NW-Fe FET) MOSFET. The aim is to mitigate the Gate-Induced Drain Leakage (GIDL) eff...

    Shalu Garg, Jasdeep Kaur, Anubha Goel, Subhasis Haldar… in Microsystem Technologies (2024)

  3. Article

    Correction: Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4 H-SiC)

    Neeraj, Shobha Sharma, Anubha Goel, Sonam Rewari, R. S. Gupta in Microsystem Technologies (2024)

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  4. No Access

    Article

    Extraction of non-quasi-static model parameters for cylindrical gate-stacked junction-less accumulation mode MOSFET and its implementation as RF filters for circuit applications

    The small signal model of MOSFET is a must for implementation of analog/digital circuits. The non-quasi-static (NQS) model is well known and provides accurate parameters for MOSFET. In the present work, extrin...

    Jitender Kumar, Aparna N. Mahajan, S. S. Deswal, Amit Saxena… in Microsystem Technologies (2023)

  5. No Access

    Article

    Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC)

    In this manuscript, analog/RF performance, linearity, harmonic distortion, small signal AC performance and scattering parameter (S-parameters) metrics of gate-stack DM nanowire (NW) FET (4H-silicon carbide) ha...

    Neeraj Neeraj, Shobha Sharma, Anubha Goel, Sonam Rewari… in Microsystem Technologies (2023)

  6. No Access

    Article

    Physics based analytical modeling and simulation of Cylindrical Junctionless Nanowire Ferroelectric field effect transistor (CJNFe-FET) for enhanced analog performance

    An analytical model has been examined in this work for dielectric engineered gate stack high K cylindrical junctionless nanowire ferrolectric field effect transistor (HCJNFe FET). HCJNFe FET (High K junctionle...

    Shalu Garg, Jasdeep Kaur, Anubha Goel, Subhasis Haldar… in Microsystem Technologies (2023)

  7. No Access

    Article

    Microwave performance assessment of AlGaN/GaN/AlGaN DH-HEMT in terms of scattering parameters and various power gains

    This paper presents a comprehensive investigation of microwave performance for symmetrically doped AlGaN/GaN/AlGaN DH-HEMT in terms of scattering parameters and power gains. A charge control based small signal...

    Nisha Chugh, Manoj Kumar, Monika Bhattacharya, R. S. Gupta in Microsystem Technologies (2023)

  8. No Access

    Article

    Small signal model parameter extraction for cylindrical silicon-on-insulator Schottky barrier MOSFET

    Small-signal model of the MOSFET is an equivalent circuit of its electric components, which defines the electrical characteristics of a MOSFET. The non-quasi-static (NQS) model is one of the most accurate smal...

    Amit Saxena, Manoj Kumar, R. K. Sharma, R. S. Gupta in Microsystem Technologies (2023)

  9. No Access

    Article

    Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor

    This paper presents for the first time an analytical model of a dielectric modulated surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows excellent improvement in sensitivity whe...

    Amit Das, Sonam Rewari, Binod Kumar Kanaujia… in Journal of Computational Electronics (2023)

  10. No Access

    Article

    Characterisation and Analysis of Schottky-Tube FET exhibiting Superior Characteristic Parameters

    The Schottky tube field-effect transistor (ST-FET) analytical model for surface potential, electric field, and subthreshold current evolved using the superposition method. The surface potential across the chan...

    Swati Sharma, Anubha Goel, Sonam Rewari… in Arabian Journal for Science and Engineering (2023)

  11. No Access

    Chapter and Conference Paper

    Gate All Around 22 nm SOI Schottky Barrier MOSFET with High ION/IOFF Current Ratio for Low-Power Digital and Analog Circuit Applications

    The design of low-power and high-speed circuits must require a high ION/IOFF ratio. In the present work, SOI Schottky barrier MOSFET is investigated for low-power digital and analog circuits applications. Static ...

    Amit Saxena, R. K. Sharma, Manoj Kumar… in Microelectronics, Circuits and Systems (2023)

  12. No Access

    Article

    Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps

    An analytical approach incorporating traps (donor type) in the AlGaN layer at the top and bottom heterointerface is proposed to determine threshold voltage (Vth), net sheet carrier concentration (ns) and drain cu...

    Nisha Chugh, Manoj Kumar, Monika Bhattacharya, R. S. Gupta in Microsystem Technologies (2022)

  13. No Access

    Article

    Dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET for improved analog performance for high frequency application

    In this paper dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET is analyzed for improvement in analog performance for applications with high frequency, usi...

    Shreya Nandy, Sanjana Srivastava, Sonam Rewari, Vandana Nath… in Microsystem Technologies (2022)

  14. No Access

    Article

    Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications

    An analytical model for determining intrinsic short-circuit admittance (Y) parameters of AlGaN/GaN/AlGaN Double Heterostructure (DH) High Electron Mobility Transistor (HEMT) is presented. These Y parameters ob...

    Nisha Chugh, Manoj Kumar, Monika Bhattacharya, R. S. Gupta in Microsystem Technologies (2021)

  15. No Access

    Article

    High-K Spacer Dual-Metal Gate Stack Underlap Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET for high frequency applications

    High-K Spacer based Dual-Metal Gate Stack Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET has been proposed and analyzed in this paper for high frequency analog ad RF applications. It has been done by compa...

    Anubha Goel, Sonam Rewari, Seema Verma, R. S. Gupta in Microsystem Technologies (2020)

  16. No Access

    Article

    Assessment of analog RF performance for insulated shallow extension (ISE) cylindrical surrounding gate (CSG) MOSFET incorporating gate stack

    In this paper, insulated shallow extension cylindrical surrounding gate (ISE-CSG) MOSFET with high-k gate stack has been proposed and extensively investigated. The performance of high-k ISE-CSG MOSFET has been...

    Nitin Trivedi, Manoj Kumar, Subhasis Haldar, S. S. Deswal… in Microsystem Technologies (2019)

  17. No Access

    Article

    Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications

    In this paper Hafnium Oxide (HfO2) based cylindrical Junctionless Double Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device performance. HfO2 based CJLDSG MOSFET has been compared w...

    Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal… in Microsystem Technologies (2019)

  18. No Access

    Article

    Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET

    In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate Al...

    Sonam Rewari, Vandana Nath, Subhasis Haldar, S. S. Deswal… in Microsystem Technologies (2019)

  19. No Access

    Article

    Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

    An accurate polarization dependent charge control-based analytical model is proposed for microwave performance assessment of $$\hbox {...

    Nisha Chugh, Monika Bhattacharya, Manoj Kumar… in Journal of Computational Electronics (2018)

  20. No Access

    Article

    Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species

    In recent times, FET-based sensors have been widely used in industrial and domestic applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded gate-all-around junctionless trans...

    Yogesh Pratap, Manoj Kumar, Sneha Kabra… in Journal of Computational Electronics (2018)

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