Skip to main content

2 Result(s)

within P. de Mierry Remove this filter

and
Your search also matched 6 preview-only Content is preview-only when you or your institution have not yet subscribed to it.

By making our abstracts and previews universally accessible we help you purchase only the content that is relevant to you. results, e.g.

Behavior of Hydrogen Introduced Under Plasma Discharge or Cathodic Polarization into Silicon

Include preview-only content

  1. Article

    Open Access

    Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

    Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescenc...

    N Kriouche, M Leroux, P Vennéguès, M Nemoz, G Nataf… in Nanoscale Research Letters (2010)

    Download PDF (624 KB) View Article

  2. Article

    Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.

    Incorporation of Mg in metalorganic vapour phase epitaxy (MOVPE) GaN has been investigated, using two different Mg precursors: bis-methylcyclopentadienyl magnesium [(MeCp)2Mg] and Solution bis-cyclopentadienyl ma...

    P. de Mierry, B. Beaumont, E. Feltin… in MRS Internet Journal of Nitride Semiconduc… (2020)

    Download PDF (95 KB) View Article