5 Result(s)
within
P. Roitman
Inorganic Chemistry
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Article
Defect Pair Formation by Implantation-Induced Stresses in High-Dose Oxygen Implanted Silicon-on-Insulator Material
Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by ...
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Article
Role of Oxygen Precipitation Processes in Defect Formation and Evolution in Oxygen Implanted Silicon-on-Insulator Material
The role of precipitation processes in defect development in high temperature implanted single and multiple implant/anneal SIMOX was studied by transmission electron microscopy. The differences in defect type,...
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Article
Effect of Intermediate Thermal Processing on Microstructural Changes of Oxygen Implanted Silicon-on-Insulator Material
The microstructural changes in oxygen implanted silicon-on-insulator material (SIMOX) at intermediate annealing steps and the changes by rapid thermal annealing (RTA) were studied with transmission electron mi...
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Article
Oxygen Bubble Formation and Transformation During High-Dose Oxygen Implantation and Annealing of Silicon
The formation of bubbles during high dose implantation of oxygen into silicon, and the subsequent transformation of the bubbles during annealing, were studied with transmission electron microscopy (TEM). There...
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Article
High Resolution Electron Microscopy Of Defects in High-Dose Oxygen Implanted Silicon-On-Insulator Material.
High resolution electron microscopy (HREM) has been used to study the atomic arrangement of defects formed during high-dose oxygen implantation of silicon-on-insulator material. The effect of implantation para...
