Skip to main content

2 Result(s)

within B. F. Cordts Remove this filter

and

  1. No Access

    Article

    High Resolution Electron Microscopy Of Defects in High-Dose Oxygen Implanted Silicon-On-Insulator Material.

    High resolution electron microscopy (HREM) has been used to study the atomic arrangement of defects formed during high-dose oxygen implantation of silicon-on-insulator material. The effect of implantation para...

    S. Visitserngtrakul, C. O. Jung, B. F. Cordts, P. Roitman… in MRS Online Proceedings Library (1990)

  2. No Access

    Article

    Effect of Implantation Conditions on the Microstructure of High-Current, Oxygen Implanted Silicon-on-Insulator Material

    Conventional and high resolution electron microscopy were used to study structural development in silicon-on-insulator material produced by oxygen implantation at temperatures of 525 to 700°C, doses of 0.3 to ...

    S. Visitsemgtrakul, B. F. Cordts, S. Krause in MRS Online Proceedings Library (1989)