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  1. No Access

    Article

    Investigation on the Gap Density of States in Amorphous Semiconducting Carbon Silicon and Carbon Tin Alloys

    The density of states in a-Six C1-x:H and a-Cy Sn1-y:H (F) semiconducting materials has been investigated by phototheTmal deflection spectroscopy (PDS) and their photoconductive properties have been related to th...

    P. Mpawenayo, M. Nsabimana in MRS Online Proceedings Library (1987)

  2. No Access

    Article

    Physical properties and structure ofa-Si1−x C x : H alloy films

    Two sets ofa-SiC:H films were deposited by glow discharge in an Ar-SiH4-CH4 atmosphere to investigate the effect of a variable CH4/SiH4 ratio on the physical properties. The composition of the films was determine...

    F. Demichelis, G. Kaniadakis, E. Mezzetti, P. Mpawenayo… in Il Nuovo Cimento D (1987)

  3. No Access

    Chapter and Conference Paper

    Structure and Optical Properties of Hydrogenated Amorphous Carbon-Tin (Ac:Sn:H) Alloys Prepared by Sputter-Assisted Plasma Chemical Deposition Technique

    aC:Sn:H films were obtained by sputtering β-tin targets in plasma atmosphere of methane and argon in variable proportions and preliminary characterization was reported on earlier(1). Here the optical and electric...

    F. Demichelis, G. Kaniadakis, P. Mpawenayo… in Seventh E.C. Photovoltaic Solar Energy Con… (1987)

  4. No Access

    Article

    Thickness Dependence of the Optical and Electrical Properties of Thin a-Si:H Films

    Optical and electrical properties are investigated as a function of thickness for two sets of samples of a-Si:H films deposited respectively by RF magnetron sputtering and by RF glow discharge under the same c...

    F. Demichelis, E. Mezzetti, P. Mpawenayo, A. Tagliaferro… in MRS Online Proceedings Library (1986)