-
Article
Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors
Chloride ion concentration can be used as a biomarker for the level of pollen exposure in allergic asthma, chronic cough and airway acidification related to respiratory disease. AlGaN/GaN high electron mobilit...
-
Article
Fast detection of Perkinsus marinus, a prevalent pathogen of oysters and clams from sea waters
Antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect Perkinsus marinus. The antibody was anchored to the gate area through immobilized thioglycolic acid. T...
-
Article
Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
Growth of GaN and AlxGa1−xN thin films on 6H-SiC(0001) and Si(111) substrates with low densities of defects using the PENDEO™ process and the characterization of the resulting materials are reported. The applicat...
-
Article
Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
Discrete and coalesced monocrystalline GaN and AlxGa1−xN layers grown via Pendeoepitaxy (PE) [1] originated from side walls of GaN seed structures containing SiNx top masks have been grown via organometallic vapo...
-
Article
Photoluminescence characterization of Mg implanted GaN
Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300°C for 10-60 minutes. Photol...
-
Article
Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
Pendeo-epitaxy of individual GaN and AlxGa, 1-xN films and single- and multi-layer heterostructures of these materials have been achieved on a columnar GaN seed layer using metallorganic vapor phase epitaxy. Thes...
-
Article
Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
Pendeo-epitaxy is a type of selective growth of thin films from the sidewalls of etched forms. The resulting films are suspended from the sidewalls and do not interface with the substrate. This process route h...
-
Article
Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors
We report on a comparison of different gate oxides for AlGaN/GaN high-electron-mobility transistor (HEMT) pH sensors. The HEMTs show a linear increase in drain-source current as the pH of the electrolyte solut...
-
Article
Characterization of GaN/Si Using Capacitance Spectroscopies
Layers of GaN deposited on Si substrates have been studied using Thermal Admittance Spectroscopy (TAS) and Optical Admittance Spectroscopy (OAS). Transparent front-side contacts were used to facilitate the opt...
-
Article
Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors
Au-gated AlGaN/GaN High Electron Mobility Transistor (HEMT) structures were functionalized in the gate region with label free 3′-thiol modified oligonucleotides. This serves as a binding layer to the AlGaN sur...
-
Article
A magnetotransport study of AlGaN/GaN heterostructures on silicon
Resistivity and Hall effect measurements as functions of temperature and magnetic field have been made on AlGaN/GaN heterostructures grown on silicon substrates. Electronic properties are comparable to those o...
-
Article
Post Varicocelectomy IVC Thrombosis; IVC Thrombectomy—A video presentation
-
Article
Modified Ultra filtration: Using dialyser in high risk adult open heart operations
-
Article
Thermal Conductivity of GaN Grown on Silicon Substrates
One of the principle problems of high power electronic devices is the extraction of heat from the active region of the device1. The thermal conductivity of the substrate is a crucial parameter affecting the therm...
-
Article
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
Discrete and coalesced monocrystalline GaN and AlxGa1-xN layers grown via pendeo-epitaxy (PE) originated from side walls of GaN seed stripes with and without SiNx top masks have been grown via organometallic vapo...
-
Article
Photoluminescence characterization of Mg implanted GaN
Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 °C for 10-60 minutes. Photo...
-
Article
Advanced PENDEOEPITAXY™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
Growth of GaN and AlxGa1−xN thin films on 6H-SiC(0001) and Si(111) substrates with low densities of defects using the PENDEO™ process and the characterization of the resulting materials are reported. The applicat...
-
Article
Pendeo-epitaxial Growth and Characterization of GaN and related Materials on 6H-SiC(0001) and Si(111) Substrates
Discrete and coalesced monocrystalline GaN and AlxGa1−xN layers grown via Pendeoepitaxy (PE) [1] originated from side walls of GaN seed structures containing SiNx top masks have been grown via organometallic vapo...
-
Article
Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of Gan Films Via the Technique of Pendeo-Epitaxy
Pendeo-epitaxy is a type of selective growth of thin films from the sidewalls of etched forms. The resulting films are suspended from the sidewalls and do not interface with the substrate. This process route h...
-
Article
Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
Pendeo-epitaxy of individual GaN and AlxGa12−xN films and single- and multi-layer heterostructures of these materials have been achieved on a columnar GaN seed layer using metallorganic vapor phase epitaxy. These...
