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Article
Photolumi Nescence of Inas/InAsPSb and InAs/Heterojunctions
Photol uminescence of p-P InAs/InAsPSb and InAs/InAl AsSb heterojunctions grown by LPE method was studied at liquid helium temperature. The recombination spectra contained a new broad band lying between the su...
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Article
Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si: H(Er)
Photo- and electroluminescence were studied in erbium-doped amorphous hydrogenated silicon films. A mechanism of excitation of erbium ions by defect-related Auger process is proposed which permits to explain c...
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Article
Defect Engineering in Si:Er Technology
Recent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects ...
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Chapter
Efficient Electroluminescence In Alloyed Silicon Diodes
Recently the interest to electroluminescence (EL) of silicon at room temperature has considerably increased. This is caused by the need to develop an optoelectronics compatible with conventional silicon techno...
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Chapter
Excitation Mechanism of Er Photoluminescence in Bulk Si And SiO2 With Nanocrystals
For about one decade, Er doped Si attracted the attention of researchers with the aim to apply it to integrated silicon-based optoelectronic devices. In fact, Er emission falls into the band of minimum absorpt...
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Chapter
Smbe Grown Uniformly And Selectively Doped Si:Er Structures For Leds And Lasers
In recent years an increasing attention has been focused on the investigation of optically active Er centers in Si in view of great application possibilities opened for this material. The intra-center emission...
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Article
Si Nanocrystals as Sensitizers for Er PL in SiO2
Sensitization of Er3+ photoluminescence in SiO2 layers by silicon nanocrystals has been investigated under resonant and nonresonant pulsed optical pum**. We observed that the very efficient channel of erbium ex...